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PDF STB21NM60N-1 Data sheet ( Hoja de datos )
| Número de pieza | STB21NM60N-1 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STP21NM60N-F21NM60N-STW21NM60N
STB21NM60N-STB21NM60N-1
N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK -
I2PAK - TO-247 second generation MDmesh™ Power MOSFET
Features
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STB21NM60N
)STB21NM60N-1
t(sSTF21NM60N
cSTP21NM60N
uSTW21NM60N
650 V
650 V
650 V
650 V
650 V
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
17 A
17 A
17 A(1)
17 A
17 A
rod1. Limited by maximum temperature allowed
P■ 100% avalanche tested
te■ Low input capacitance and gate charge
le■ Low gate input resistance
bsoApplication
- O■ Switching applications
t(s)Description
ucThis series of devices implements the second
dgeneration of MDmesh™ technology. This
rorevolutionary Power MOSFET associates a new
Pvertical structure to the company’s strip layout to
teyield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
Obsoledemanding high efficiency converters.
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
Package
Packaging
STB21NM60N
STB21NM60N-1
B21NM60N
B21NM60N
D2PAK
I2PAK
Tape and reel
Tube
STF21NM60N
F21NM60N
TO-220FP
Tube
STP21NM60N
P21NM60N
TO-220
Tube
STW21NM60N
W21NM60N
TO-247
Tube
February 2008
Rev 7
1/18
www.st.com
18
1 page  
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 17 A, VGS = 0
17 A
68 A
1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, VDD = 100 V
di/dt=100 A/µs
(see Figure 20)
372
4.6
25
ns
µC
A
trr
Qrr
t(s)IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A,VDD = 100 V
di/dt=100 A/µs,
Tj = 150 °C
(see Figure 20)
c1. Pulse width limited by safe operating area
Obsolete Product(s) - Obsolete Produ2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
486
6.3
26
ns
µC
A
5/18
5 Page 
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Package mechanical data
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.49
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
)D1 1.27
0.050
t(sE 10
10.40
0.393
0.409
e 2.40
2.70
0.094
0.106
ce1 4.95
5.15
0.194
0.202
duF 1.23
1.32
0.048
0.051
roH1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
PL 13
14 0.511
0.551
teL1 3.50
3.93
0.137
0.154
leL20 16.40
0.645
L30 28.90
1.137
so∅P 3.75
3.85
0.147
0.151
Obsolete Product(s) - ObQ 2.65
2.95
0.104
0.116
11/18
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet STB21NM60N-1.PDF ] | |
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