(PDF) BS107PT Datasheet - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Número de pieza	BS107PT
Descripción	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Fabricantes	Zetex Semiconductors
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No Preview Available ! N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=28Ω BS107PT ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb =25°C Operating and Storage Temperature Range VDS ID IDM VGS Ptot Tj:Tstg D G S E-Line TO92 Compatible VALUE 200 0.12 2 ±20 500 -55 to +150 UNIT V A A V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 200 230 V ID=100µA, VGS=0V Gate Body Leakage IGSS 10 nA Drain Cut-Off Current IDSS 30 nA Drain Cut-Off Current IDSX 1 µA Static Drain-Source on-State Resistance RDS(on) 15 28 Ω 30 Ω * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% VGS=15V, VDS=0V VGS=0V, VDS=130V VGS=0.2V, VDS=70V VGS=2.6V, ID=20mA* VGS=2.7V, ID=100mA* 3-24 1 page

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PDF Descargar	[ Datasheet BS107PT.PDF ]

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PDF BS107PT Data sheet ( Hoja de datos )