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AO4840 PDF даташит

Спецификация AO4840 изготовлена ​​​​«Alpha & Omega Semiconductors» и имеет функцию, называемую «Dual N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв AO4840
Описание Dual N-Channel Enhancement Mode Field Effect Transistor
Производители Alpha & Omega Semiconductors
логотип Alpha & Omega Semiconductors логотип 

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AO4840 Даташит, Описание, Даташиты
AO4840
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4840 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. This dual device is suitable for use as a load
switch or in PWM applications. Standard Product
AO4840 is Pb-free (meets ROHS & Sony 259
specifications). AO4840L is a Green Product
ordering option. AO4840 and AO4840L are
electrically identical.
VDS (V) = 40V
ID = 6A (VGS=10V)
RDS(ON) < 31m(VGS=10V)
RDS(ON) < 45m(VGS=4.5V)
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D2
G2
S2
G1
www.DataSheet4U.com
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Max
40
±20
6
5
20
2
1.28
-55 to 150
D1
S1
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
35
Max
62.5
110
50
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.









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AO4840 Даташит, Описание, Даташиты
AO4840
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=10mA, VGS=0V
VDS=32V, VGS=0V
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=6A
VGS=4.5V, ID=5A
Forward Transconductance
VDS=5V, ID=6A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=20V, ID=6A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=20V, RL=3.3,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
Min
40
1
20
Typ Max Units
V
1
µA
5
±100 nA
2.3 3
V
A
25 31
m
36 48
35 45 m
22 S
0.75 1
V
3A
404 pF
95 pF
37 pF
2.7
8.3 nC
4.2 nC
1.3 nC
2.3 nC
4.2 ns
3.3 ns
15.6 ns
3 ns
20.5 ns
14.5 nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 0 : February 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.









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AO4840 Даташит, Описание, Даташиты
AO4840
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
20
15
10
5
5V
4.5V
4V
VGS=3.5V
20
15
10
5
0
012345
VDS (Volts)
Fig 1: On-Region Characteristics
0
2
50
40 VGS=4.5V
30
VGS=10V
20
0
5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.8
1.6
1.4
1.2
1
0.8
0
VDS=5V
125°C
25°C
2.5 3 3.5 4
VGS(Volts)
Figure 2: Transfer Characteristics
4.5
VGS=10V
ID=6A
VGS=4.5V
ID=5A
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
80
70 ID=6A
60
50
125°C
40
30
25°C
20
10
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Alpha & Omega Semiconductor, Ltd.










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