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Datasheet 201CNQ Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 201CNQ | Schottky Rectifier, Diode Bulletin PD-2.258 rev. C 07/01
201CNQ... SERIES
SCHOTTKY RECTIFIER 200 Amp
TO-244AB
Major Ratings and Characteristics Characteristics
IF(AV) Rectangular waveform VRRM range IFSM @ tp = 5 µs sine VF TJ @ 100Apk, TJ=125°C (per leg) range
Description/Features
The 201CNQ center tap Schottky rectif |  International Rectifier | rectifier |
| 2 | 201CNQ045PBF | Schottky Rectifier, Diode Bulletin PD-21102 rev. A 11/06
201CNQ045PbF SERIES
SCHOTTKY RECTIFIER 200 Amp
LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2
BASE COMMON CATHODE
Major Ratings and Characteristics Characteristics
IF(AV) Rectangular waveform VRRM IFSM VF TJ @ tp = 5 μs sine @ 100Apk, TJ=125°C (per leg) range
Descript | International Rectifier | rectifier |
201 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2010 | Double Sided Chip Resistor RDeosiustbolres-Sided DCohuipbleR-eSsidisetdorCship Resistors
Welwyn Components
DDSSCCSeSrieersies
TTwwoopparaarlalelllerelsriestsainstcaenecleemeelnetms einnatssingle chip
Einxceallseinntgpluelscehwipithstand performance
LEaxsceer ltlreimntmpeudlusep two i0t.h5s%tatonlderpanecreformance
 TT electronics data | | |
| 2 | 2010DN | FYP2010DN
FYP2010DN
FYP2010DN
Features
• Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection
Applications
• Switched mode power supply • Freewheeling diodes
1 2 3
TO-220
1. Anode 2.Cathode 3. Anode
SCHOTTKY BARRI  Fairchild Semiconductor data | | |
| 3 | 2012E | Tuning Fork SMD Quartz Crystal YIC data | | |
| 4 | 2012ES | Tuning Fork SMD Quartz Crystal YIC data | | |
| 5 | 2015 | Single P-Channel Power MOSFET Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2015
Single P-Channel, -20V, -2.4A, Power MOSFET
VDS (V) -20
Rds(on) (ȍ) 0.081@ VGS=4.5V 0.103@ VGS=2.5V
Descriptions
The 2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excelle  Tuofeng Semiconductor mosfet | | |
| 6 | 2015M | MICROWAVEBIPOLAR ETC data | | |
| 7 | 2016 | N-Channel Enhancement Mode Field Effect Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2016
2016
N-Channel Enhancement Mode Field Effect Transistor
General Description
The 2016 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for us Tuofeng Semiconductor transistor | |
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