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PDF STRH12P10ESY3 Data sheet ( Hoja de datos )
| Número de pieza | STRH12P10ESY3 | |
| Descripción | Rad-hard low gate charge STripFET Power MOSFET | |
| Fabricantes | ST Microelectronics | |
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STRH12P10ESY3
P-channel 100V - 0.265Ω - TO-257AA
Rad-hard low gate charge STripFET™ Power MOSFET
General features
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Type
STRH12P10ESY3
VDSS
100V
■ Low RDS(on)
■ Fast switching
■ Single event effect (SEE) hardned
■ Low total gate charge
■ Light weight
■ 100% avalanche tested
■ Application oriented characterization
■ Hermetically sealed
■ Heavy ion SOA
■ 100kRad TID
■ SEL & SEGR with 34Mev/cm²/mg LET ions
TO-257AA
Internal schematic diagram
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to sustain high TID
and provide immunity to heavy ion effects. It is
therefore suitable as power switch in mainly high-
efficiency DC-DC converters. It is also intended
for any application with low gate charge drive
requirements.
Application
■ Satellite
■ High reliability
Order codes
Part number
STRH12P10ESY1 (1)
STRH12P10ESY3 (2)
Marking
RH12P10ESY1
RH12P10ESY3
1. Mil temp range
2. Space flights parts (full ESA flow screening)
Package
TO-257AA
TO-257AA
Packaging
Individual strip pack
Individual strip pack
March 2007
Rev 2
1/12
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12
1 page  
STRH12P10ESY3
Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 12A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12A, di/dt = 100A/µs
VDD= 9V, Tj = 25°C
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12A, di/dt = 100A/µs
VDD= 9V, Tj = 150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max Unit
12
48
1.1
248
2.3
19
300
3
22
A
A
V
ns
µC
A
ns
µC
A
2.2 Post-irradiation
The ST Rad-Hard Power MOSFETs are tested to verify the radiation capability. The
technology is extremely resistant to assurance well functioning of the device inside the
radiation environments. Every manufacturing lot is tested for total ionizing dose.
(@Tj=25°C up to 100Krad (a))
Table 8. On/off states
Symbol
Parameter
Test conditions
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
Gate body leakage current
(VDS = 0)
V(BR)DSS
Drain-source breakdown
voltage
VGS(th) Gate threshold voltage
RDS(on)
Static drain-source on
resistance
80% BVDss
VGS = ±18V
ID = 250µA, VGS = 0V
VDS =VGS, ID = 1mA
VGS = 12V, ID = 12A
Min. Typ. Max Unit
10 µA
±100 nA
100
2 4.5
0.265 0.3
V
V
Ω
a. According to ESCC 22900 specification, Co60 gamma rays, dose rate:0.1rad/sec.
5/12
5 Page 
STRH12P10ESY3
5 Revision history
Table 11. Revision history
Date
Revision
20-Dec-2006
1 First release
19-Mar-2007
2 Complete version
Revision history
Changes
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STRH12P10ESY3.PDF ] | |
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