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PDF STRH13N20SY3 Data sheet ( Hoja de datos )
| Número de pieza | STRH13N20SY3 | |
| Descripción | Power MOSFETs for Aerospace | |
| Fabricantes | ST Microelectronics | |
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STRH13N20SY3
N-channel 200V - 0.18Ω - SMD-0.5
Rad-hard low gate charge STripFET™ Power MOSFET
General features
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Type
STRH13N20SY3
VDSS
200V
■ Low RDS(on)
■ Fast switching
■ Single event effect (SEE) hardned
■ Low total gate charge
■ Light weight
■ 100% avalanche tested
■ Application oriented characterization
■ Hermetically sealed
■ Heavy ion SOA
■ 100kRad TID
■ SEL & SEGR with 34Mev/cm²/mg LET ions
SMD-0.5
Internal schematic diagram
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to sustain high TID
and provide immunity to heavy ion effects. It is
therefore suitable as power switch in mainly high-
efficiency DC-DC converters. It is also intended
for any application with low gate charge drive
requirements.
Applications
■ Satellite
■ High reliability
Order codes
Part number
STRH13N20SY1 (1)
STRH30N20SY3 (2)
Marking
RH13N20SY1
RH30N20SY3
1. Mil temp range
2. Space flights parts (full ESA flow screening)
March 2007
Rev 2
Package
SMD-0.5
SMD-0.5
Packaging
Individual strip pack
Individual strip pack
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12
1 page  
STRH13N20SY3
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 13A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 13A, di/dt = 100A/µs
VDD= 20V, Tj = 25°C
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 13A, di/dt = 100A/µs
VDD= 20V, Tj = 150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max Unit
13
52
1.5
310
3.3
21
372
4.2
23
A
A
V
ns
µC
A
ns
µC
A
2.2 Post-irradiation
The ST Rad-Hard Power MOSFETs are tested to verify the radiation capability. The
technology is extremely resistant to assurance well functioning of the device inside the
radiation environments. Every manufacturing lot is tested for total ionizing dose.
(@Tj=25°C up to 100Krad (a))
Table 8. On/off states
Symbol
Parameter
Test conditions
IDSS
IGSS
BVDSS
VGS(th)
RDS(on)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Drain-to-source breakdown
voltage
Gate threshold voltage
Static drain-source on
resistance
80% BVDss
VGS = ±16V
VGS = 0V, ID = 1mA
VDS =VGS, ID = 1mA
VGS = 12V
ID = 6.5A
Min. Typ. Max. Unit
10 µA
±100 nA
200
2 4.5
0.18 0.22
V
V
Ω
a. According to ESCC 22900 specification, Co60 gamma rays, dose rags:0.1rad/sec.
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5 Page 
STRH13N20SY3
5 Revision history
Table 11. Revision history
Date
Revision
21-Dec-2006
1 First release
26-Mar-2007
2 Complete version
Revision history
Changes
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STRH13N20SY3.PDF ] | |
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