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NSBA1xxxDXV6T5 PDF даташит

Спецификация NSBA1xxxDXV6T5 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «(NSBA114EDXV6T5 Series) Dual Bias Resistor Transistors».

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Номер произв NSBA1xxxDXV6T5
Описание (NSBA114EDXV6T5 Series) Dual Bias Resistor Transistors
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSBA1xxxDXV6T5 Даташит, Описание, Даташиты
NSBA114EDXV6T1,
NSBA114EDXV6T5 SERIES
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBA114EDXV6T1
series, two BRT devices are housed in the SOT−563 package which is
ideal for low−power surface mount applications where board space is
at a premium.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These are Pb−Free Devices
MAXIMUM RATINGS
www.DataSheet4U.com
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Rating
Symbol Value
Unit
Collector-Base Voltage
VCBO −50 Vdc
Collector-Emitter Voltage
VCEO
−50
Vdc
Collector Current
IC
−100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol Max
Unit
Total Device Dissipation @ TA = 25°C PD 357 mW
Derate above 25°C (Note 1)
2.9 mW/°C
Thermal Resistance, Junction-to-Ambient RqJA
(Note 1)
350 °C/W
Characteristic
(Both Junctions Heated)
Total Device Dissipation @ TA = 25°C
Derate above 25°C (Note 1)
Symbol
PD
Max
500
4.0
Unit
mW
mW/°C
Thermal Resistance, Junction-to-Ambient RqJA
(Note 1)
250 °C/W
Junction and Storage Temperature
Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 6
1
http://onsemi.com
(3) (2) (1)
R1 R2
Q1
R2 R1
Q2
(4) (5)
(6)
SOT−563
CASE 463A
PLASTIC
1 STYLE 1
MARKING DIAGRAM
xx M G
G
xx = Device Code
(Refer to page 2)
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NSBA1xxxDXV6T1 SOT−563* 4000/Tape & Reel
NSBA1xxxDXV6T1G SOT−563* 4000/Tape & Reel
NSBA1xxxDXV6T5 SOT−563* 8000/Tape & Reel
NSBA1xxxDXV6T5G SOT−563* 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
**This package is inherently Pb−Free.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
NSBA114EDXV6/D









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NSBA1xxxDXV6T5 Даташит, Описание, Даташиты
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
DEVICE MARKING AND RESISTOR VALUES
Device*
Package
Marking
R1 (kW)
NSBA114EDXV6T1 / T5
SOT−563
0A
10
NSBA124EDXV6T1 / T5
SOT−563
0B
22
NSBA144EDXV6T1 / T5
SOT−563
0C
47
NSBA114YDXV6T1 / T5
SOT−563
0D
10
NSBA114TDXV6T1 / T5
(Note 2)
SOT−563
0E
10
NSBA143TDXV6T1 / T5
(Note 2)
SOT−563
0F
4.7
NSBA113EDXV6T1 / T5
(Note 2)
SOT−563
0G
1.0
NSBA123EDXV6T1 / T5
(Note 2)
SOT−563
0H
2.2
NSBA143EDXV6T1 / T5
(Note 2)
SOT−563
0J
4.7
NSBA143ZDXV6T1 / T5
(Note 2)
SOT−563
0K
4.7
NSBA124XDXV6T1 / T5
(Note 2)
SOT−563
0L
22
NSBA123JDXV6T1 / T5
(Note 2)
SOT−563
0M
2.2
NSBA115EDXV6T1 / T5
(Note 2)
SOT−563
0N
100
NSBA144WDXV6T1
(Note 2)
SOT−563
0P
47
*The “G’’ suffix indicates Pb−Free package available. Refer to Ordering Information Table on page 1.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = −50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE = −50 V, IB = 0)
Emitter-Base Cutoff Current
(VEB = −6.0 V, IC = 0)
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA144EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
ICBO
ICEO
IEBO
Collector-Base Breakdown Voltage (IC = −10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 3) (IC = −2.0 mA, IB = 0)
ON CHARACTERISTICS (Note 3)
V(BR)CBO
V(BR)CEO
−50
−50
Collector-Emitter Saturation Voltage (IC = −10 mA, IE = −0.3 mA)
(IC = −10 mA, IB = −5 mA) NSBA113EDXV6T1/NSBA123EDXV6T1
(IC = −10 mA, IB = −1 mA) NSBA114TDXV6T1/NSBA143TDXV6T1
NSBA143EDXV6T1/NSBA143ZDXV6T1/NSBA124XDXV6T1
VCE(sat)
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Typ
R2 (kW)
10
22
47
47
1.0
2.2
4.7
47
47
47
100
22
Max Unit
−100
−500
−0.5
−0.2
−0.1
−0.2
−0.9
−1.9
−4.3
−2.3
−1.5
−0.18
−0.13
−0.2
−0.05
−0.13
nAdc
nAdc
mAdc
Vdc
Vdc
−0.25
Vdc
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NSBA1xxxDXV6T5 Даташит, Описание, Даташиты
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (continued)
Characteristic
Symbol
Min Typ
ON CHARACTERISTICS (Note 3) (continued)
DC Current Gain
(VCE = −10 V, IC = −5.0 mA)
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA144EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
hFE
35 60
60 100
80 140
80 140
160 250
160 250
3.0 5.0
8.0 15
15 27
80 140
80 130
80 140
80 130
80 140
Output Voltage (on)
(VCC = −5.0 V, VB = −2.5 V, RL = 1.0 kW)
(VCC = −5.0 V, VB = −3.5 V, RL = 1.0 kW)
(VCC = −5.0 V, VB = −5.5 V, RL = 1.0 kW)
(VCC = −5.0 V, VB = −4.0 V, RL = 1.0 kW)
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA144EDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
Output Voltage (off) (VCC = −5.0 V, VB = −0.5 V, RL = 1.0 kW)
(VCC = −5.0 V, VB = −0.05 V, RL = 1.0 kW)
NSBA113EDXV6T1
(VCC = −5.0 V, VB = − 0.25 V, RL = 1.0 kW)
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA123EDXV6T1
NSBA143ZDXV6T1
VOL
VOH
−4.9
Input Resistor
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA144EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
R1
7.0 10
15.4 22
32.9 47
7.0 10
7.0 10
3.3 4.7
0.7 1.0
1.5 2.2
3.3 4.7
3.3 4.7
15.4 22
1.54 2.2
70 100
32.9 47
Resistor Ratio
NSBA114EDXV6T1/NSBA124EDXV6T1/
NSBA144EDXV6T1/NSBA115EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1/NSBA143TDXV6T1
NSBA113EDXV6T1/NSBA123EDXV6T1/NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA144WDXV6T1
R1/R2
0.8
0.17
0.8
0.055
0.38
0.038
1.7
1.0
0.21
1.0
0.1
0.47
0.047
2.1
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Max
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
1.2
0.185
0.56
0.056
2.6
Unit
Vdc
Vdc
kW
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Номер в каталогеОписаниеПроизводители
NSBA1xxxDXV6T1(NSBA114EDXV6T5 Series) Dual Bias Resistor TransistorsON Semiconductor
ON Semiconductor
NSBA1xxxDXV6T5(NSBA114EDXV6T5 Series) Dual Bias Resistor TransistorsON Semiconductor
ON Semiconductor

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