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4N31 PDF даташит

Спецификация 4N31 изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «(4N30 - 4N3) General Purpose 6-Pin Photodarlington Optocoupler».

Детали детали

Номер произв 4N31
Описание (4N30 - 4N3) General Purpose 6-Pin Photodarlington Optocoupler
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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4N31 Даташит, Описание, Даташиты
April 2007
4N29, 4N30, 4N31, 4N32, 4N33
General Purpose 6-Pin Photodarlington Optocoupler
tm
Features
High sensitivity to low input drive current
Meets or exceeds all JEDEC Registered
Specifications
VDE 0884 approval available as a test option
– add option .300. (e.g., 4N29.300)
Applications
Low power logic circuits
Telecommunications equipment
Portable electronics
Solid state relays
Interfacing coupling systems of different potentials
and impedances
Description
The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium
arsenide infrared emitter optically coupled to a silicon
planar photodarlington.
Packages
White Package (-M Suffix)
6
6
1
1
6
1
Black Package (No -M Suffix)
6
16
6
1
1
www.DataSheet4U.com
Schematic
ANODE 1
CATHODE 2
N/C 3
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
6 BASE
5 COLLECTOR
4 EMITTER
www.fairchildsemi.com









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4N31 Даташит, Описание, Даташиты
Absolute Maximum Ratings (TA = 25°C Unless otherwise specified.)
Symbol
Parameter
Device
TOTAL DEVICE
TSTG
Storage Temperature
Non M
M
TOPR
Operating Temperature
Non M
M
TSOL
PD
Lead Solder Temperature
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
All
All
EMITTER
IF
VR
IF(pk)
PD
Continuous Forward Current
Reverse Voltage
Forward Current – Peak (300µs, 2% Duty Cycle)
LED Power Dissipation @ TA = 25°C
Derate above 25°C
All
All
All
All
DETECTOR
BVCEO
BVCBO
BVECO
PD
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
All
All
All
All
IC Continuous Collector Current
All
Value
-55 to +150
-40 to +150
-55 to +100
-40 to +100
260 for 10 sec
250
3.3
80
3
3.0
150
2.0
30
30
5
150
2.0
150
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
V
V
V
mW
mW/°C
mA
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
2
www.fairchildsemi.com









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4N31 Даташит, Описание, Даташиты
Electrical Characteristics (TA = 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
Test Conditions Min.
EMITTER
VF Input Forward Voltage*
IR Reverse Leakage Current*
C Capacitance*
DETECTOR
IF = 10mA
VR = 3.0V
VF = 0V, f = 1.0MHz
BVCEO
BVCBO
BVECO
ICEO
hFE
Collector-Emitter Breakdown Voltage* IC = 1.0mA, IB = 0
Collector-Base Breakdown Voltage* IC = 100µA, IE = 0
Emitter-Collector Breakdown Voltage* IE = 100µA, IB = 0
Collector-Emitter Dark Current*
VCE = 10V, Base Open
DC Current Gain
VCE = 5.0V, IC = 500µA
30
30
5.0
Typ.
1.2
0.001
150
60
100
8
1
5000
Max.
1.5
100
100
Unit
V
µA
pF
V
V
V
nA
Transfer Characteristics
Symbol
Parameter
Test Conditions
DC CHARACTERISTICS
IC(CTR) Collector Output Current*(1, 2) IF = 10mA, VCE = 10V, IB = 0
4N32, 4N33
4N29, 4N30
VCE(SAT)
4N31
Saturation Voltage*(2)
4N29, 4N30, 4N32, 4N33
IF = 8mA, IC = 2.0mA
4N31
AC CHARACTERISTICS
ton Turn-on Time
toff Turn-off Time
4N32, 4N33
4N29, 4N30, 4N31
IF = 200mA, IC = 50mA,
VCC = 10V
IF = 200mA, IC = 50mA,
VCC = 10V
BW Bandwidth(3, 4)
Min.
50 (500)
10 (100)
5 (50)
Typ.
30
Max. Unit
– mA (%)
1.0 V
1.2
5.0 µS
100 µS
40
– kHz
Isolation Characteristics
Symbol
VISO
RISO
CISO
Characteristic
Input-Output Isolation Voltage(5)
4N29, 4N30, 4N31, 4N32, 4N33
4N32*
4N33*
Isolation Resistance(5)
Isolation Capacitance(5)
Test Conditions
II-O 1µA, Vrms, t = 1min.
VDC
VDC
VI-O = 500VDC
VI-O = Ø, f = 1MHz
Min. Typ. Max. Units
5300
2500
1500
1011
0.8
– Vac(rms)
–V
– pF
Notes:
* Indicates JEDEC registered data.
1. The current transfer ratio(IC/IF) is the ratio of the detector collector current to the LED input current with VCE @ 10V.
2. Pulse test: pulse width = 300µs, duty cycle 2.0% .
4. IF adjusted to IC = 2.0mA and IC = 0.7mA rms.
5. The frequency at which IC is 3dB down from the 1kHz value.
6. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
3
www.fairchildsemi.com










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