4N31 PDF даташит
Спецификация 4N31 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «(4N30 - 4N3) General Purpose 6-Pin Photodarlington Optocoupler». |
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Детали детали
Номер произв | 4N31 |
Описание | (4N30 - 4N3) General Purpose 6-Pin Photodarlington Optocoupler |
Производители | Fairchild Semiconductor |
логотип |
13 Pages
No Preview Available ! |
April 2007
4N29, 4N30, 4N31, 4N32, 4N33
General Purpose 6-Pin Photodarlington Optocoupler
tm
Features
■ High sensitivity to low input drive current
■ Meets or exceeds all JEDEC Registered
Specifications
■ VDE 0884 approval available as a test option
– add option .300. (e.g., 4N29.300)
Applications
■ Low power logic circuits
■ Telecommunications equipment
■ Portable electronics
■ Solid state relays
■ Interfacing coupling systems of different potentials
and impedances
Description
The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium
arsenide infrared emitter optically coupled to a silicon
planar photodarlington.
Packages
White Package (-M Suffix)
6
6
1
1
6
1
Black Package (No -M Suffix)
6
16
6
1
1
www.DataSheet4U.com
Schematic
ANODE 1
CATHODE 2
N/C 3
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
6 BASE
5 COLLECTOR
4 EMITTER
www.fairchildsemi.com
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Absolute Maximum Ratings (TA = 25°C Unless otherwise specified.)
Symbol
Parameter
Device
TOTAL DEVICE
TSTG
Storage Temperature
Non M
M
TOPR
Operating Temperature
Non M
M
TSOL
PD
Lead Solder Temperature
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
All
All
EMITTER
IF
VR
IF(pk)
PD
Continuous Forward Current
Reverse Voltage
Forward Current – Peak (300µs, 2% Duty Cycle)
LED Power Dissipation @ TA = 25°C
Derate above 25°C
All
All
All
All
DETECTOR
BVCEO
BVCBO
BVECO
PD
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
All
All
All
All
IC Continuous Collector Current
All
Value
-55 to +150
-40 to +150
-55 to +100
-40 to +100
260 for 10 sec
250
3.3
80
3
3.0
150
2.0
30
30
5
150
2.0
150
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
V
V
V
mW
mW/°C
mA
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
2
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics (TA = 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
Test Conditions Min.
EMITTER
VF Input Forward Voltage*
IR Reverse Leakage Current*
C Capacitance*
DETECTOR
IF = 10mA
VR = 3.0V
VF = 0V, f = 1.0MHz
–
–
–
BVCEO
BVCBO
BVECO
ICEO
hFE
Collector-Emitter Breakdown Voltage* IC = 1.0mA, IB = 0
Collector-Base Breakdown Voltage* IC = 100µA, IE = 0
Emitter-Collector Breakdown Voltage* IE = 100µA, IB = 0
Collector-Emitter Dark Current*
VCE = 10V, Base Open
DC Current Gain
VCE = 5.0V, IC = 500µA
30
30
5.0
–
–
Typ.
1.2
0.001
150
60
100
8
1
5000
Max.
1.5
100
–
–
–
–
100
–
Unit
V
µA
pF
V
V
V
nA
Transfer Characteristics
Symbol
Parameter
Test Conditions
DC CHARACTERISTICS
IC(CTR) Collector Output Current*(1, 2) IF = 10mA, VCE = 10V, IB = 0
4N32, 4N33
4N29, 4N30
VCE(SAT)
4N31
Saturation Voltage*(2)
4N29, 4N30, 4N32, 4N33
IF = 8mA, IC = 2.0mA
4N31
AC CHARACTERISTICS
ton Turn-on Time
toff Turn-off Time
4N32, 4N33
4N29, 4N30, 4N31
IF = 200mA, IC = 50mA,
VCC = 10V
IF = 200mA, IC = 50mA,
VCC = 10V
BW Bandwidth(3, 4)
Min.
50 (500)
10 (100)
5 (50)
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
30
Max. Unit
– mA (%)
–
–
1.0 V
1.2
5.0 µS
100 µS
40
– kHz
Isolation Characteristics
Symbol
VISO
RISO
CISO
Characteristic
Input-Output Isolation Voltage(5)
4N29, 4N30, 4N31, 4N32, 4N33
4N32*
4N33*
Isolation Resistance(5)
Isolation Capacitance(5)
Test Conditions
II-O ≤ 1µA, Vrms, t = 1min.
VDC
VDC
VI-O = 500VDC
VI-O = Ø, f = 1MHz
Min. Typ. Max. Units
5300
2500
1500
–
–
–
–
–
1011
0.8
– Vac(rms)
–V
–
–Ω
– pF
Notes:
* Indicates JEDEC registered data.
1. The current transfer ratio(IC/IF) is the ratio of the detector collector current to the LED input current with VCE @ 10V.
2. Pulse test: pulse width = 300µs, duty cycle ≤ 2.0% .
4. IF adjusted to IC = 2.0mA and IC = 0.7mA rms.
5. The frequency at which IC is 3dB down from the 1kHz value.
6. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
3
www.fairchildsemi.com
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