MRF6P23190HR6 PDF даташит
Спецификация MRF6P23190HR6 изготовлена «Freescale Semiconductor» и имеет функцию, называемую «RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET». |
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Детали детали
Номер произв | MRF6P23190HR6 |
Описание | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
Производители | Freescale Semiconductor |
логотип |
11 Pages
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 2300 to
2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C for WLL applications.
•
TP3.yo8pu4tic=Mal4H20z-,WCPaaAtrtRrsie=Ar vW8g.5.-,[email protected]%oernmPcyaronBbcaaenb:diVl,itDyCDho=ann2Cn8CeVlDBoFla.tsn,dIwDQidt=h
1900
=
mA,
Power Gain — 14 dB
Drain Efficiency — 23.5%
IM3 @ 10 MHz Offset — - 37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Document Number: MRF6P23190H
Rev. 2, 3/2007
MRF6P23190HR6
2300 - 2400 MHz, 40 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
www.DataSheet4U.com
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ TC = 25°C
Derate above 25°C
VDSS
VGS
Tstg
TC
TJ
CW
- 0.5, +68
- 0.5, +12
- 65 to +150
150
200
250
1.3
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 100°C, 160 W CW
Case Temperature 83°C, 40 W CW
RθJC
0.22
0.24
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
°C
°C
°C
W
W/°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6P23190HR6
1
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Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics(1)
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
—
—
10 μAdc
IDSS
—
—
1 μAdc
IGSS
—
—
1 μAdc
On Characteristics
Gate Threshold Voltage(1)
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
1
2
3 Vdc
Gate Quiescent Voltage(3)
(VDD = 28 Vdc, ID = 1900 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4 Vdc
Drain - Source On - Voltage(1)
(VGS = 10 Vdc, ID = 2.2 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.5 — pF
Functional Tests(3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1900 mA, Pout = 40 W Avg., f1 = 2300 MHz,
f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Gps 13 14 16 dB
Drain Efficiency
ηD 22 23.5 — %
Intermodulation Distortion
IM3
—
- 37.5
- 35
dBc
Adjacent Channel Power Ratio
ACPR
—
- 41 - 38 dBc
Input Return Loss
IRL — - 13 — dB
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
MRF6P23190HR6
2
RF Device Data
Freescale Semiconductor
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VBIAS
R1
++
C12 C11 C10 C9
B1
B2
RF
INPUT Z1
Z2
Z3 Z5 Z7
C1
C5
Z13
Z9 Z11
Z4
Z6 Z8 Z10
Z12
DUT
C2
Z14
VBIAS
R2
++
B3
C16 C15 C14 C13
B4
C6
+ VSUPPLY
C7 C17 C18 C19 C20 C21 C27
Z19
Z15 Z17 Z21
Z23
C3
RF
Z25 Z26 Z27 Z28 OUTPUT
Z16 Z18 Z22
Z24
C4
Z20
+ VSUPPLY
C8 C22 C23 C24 C25 C26 C28
Z1, Z28
Z2
Z3
Z4
Z5, Z6
Z7, Z8
Z9, Z10
Z11, Z12
Z13, Z14
Z15, Z16
0.380″ x 0.081″ Microstrip
0.850″ x 0.135″ Microstrip
2.244″ x 0.081″ Microstrip
0.186″ x 0.074″ Microstrip
0.614″ x 0.081″ Microstrip
0.570″ x 0.282″ Microstrip
0.072″ x 0.500″ Microstrip
0.078″ x 0.500″ Microstrip
0.861″ x 0.050″ Microstrip
0.187″ x 0.782″ Microstrip
Z17, Z18
Z19, Z20
Z21, Z22
Z23
Z24
Z25
Z26
Z27
PCB
0.321″ x 0.782″ Microstrip
0.404″ x 0.074″ Microstrip
0.918″ x 0.081″ Microstrip
0.346″ x 0.081″ Microstrip
2.103″ x 0.081″ Microstrip
0.037″ x 0.135″ Microstrip
0.250″ x 0.300″ Microstrip
0.563″ x 0.135″ Microstrip
Arlon GX - 0300 - 5022, 0.030″, εr = 2.55
Figure 1. MRF6P23190HR6 Test Circuit Schematic
Table 5. MRF6P23190HR6 Test Circuit Component Designations and Values
Part
Description
Part Number
B1, B2, B3, B4
Ferrite Beads
2508051107Y0
C1, C2, C3, C4
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
C5, C6, C7, C8
5.6 pF Chip Capacitors
ATC100B5R6CT500XT
C9, C13
0.01 μF, 100 V Chip Capacitors
C1825C103J1RAC
C10, C14, C17, C22
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
C11, C15
22 μF, 25 V Tantalum Capacitors
ECS - T1ED226R
C12, C16
47 μF, 16 V Tantalum Capacitors
T491D476K016AT
C18, C19, C20, C21, C23,
C24, C25, C26
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
C27, C28
330 μF, 63 V Electrolytic Capacitors
NACZF331M63V
R1, R2
240 Ω, 1/4 W Chip Resistors
CRCW12062400FKTA
Manufacturer
Fair - Rite
ATC
ATC
Kemet
Kemet
Panasonic TE series
Kemet
Murata
Nippon
Vishay
RF Device Data
Freescale Semiconductor
MRF6P23190HR6
3
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Номер в каталоге | Описание | Производители |
MRF6P23190HR6 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | Freescale Semiconductor |
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