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PDF MRF6S24140HR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF6S24140HR3 | |
| Descripción | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for large - signal output applications at 2450 MHz. Device
is suitable for use in industrial, medical and scientific applications.
•
Typical CW Performance at
PouPt o=w1e4r0GWaaintt—s 13.2 dB
2450
MHz,
VDD
=
28
Volts,
IDQ
=
1200
mA,
Drain Efficiency — 45%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S24140H
Rev. 0, 3/2007
MRF6S24140HR3
MRF6S24140HSR3
2450 MHz, 140 W, 28 V
CW
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF6S24140HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF6S24140HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +68
- 0.5, +12
- 65 to +150
150
200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 82°C, 140 W CW
Case Temperature 75°C, 28 W CW
RθJC
0.29
0.33
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S24140HR3 MRF6S24140HSR3
1
1 page  
TYPICAL CHARACTERISTICS — 2450 MHz
16
IDQ = 1200 mA
f = 2450 MHz
15
Gps
14
VDD = 28 V 32 V
30 V
50
40
30
13 20
12 32 V 10
ηD
11
1
10
28 V
100
30 V
0
500
Pout, OUTPUT POWER (WATTS) CW
Figure 3. Power Gain and Drain Efficiency
versus CW Output Power as a Function of VDD
14.5 60
Gps
14
50
13.5 40
13 30
12.5
15
Gps
14
1400 mA
12
11.5
1
VDD = 28 V
ηD
IDQ = 1200 mA
f = 2450 MHz
10 100
Pout, OUTPUT POWER (WATTS) CW
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
1200 mA
107
1000 mA
13
1100 mA 1300 mA
106
20
10
0
12
11 VDD = 28 V
f = 2450 MHz
10
1 10 100
Pout, OUTPUT POWER (WATTS) CW
Figure 5. Power Gain and Drain Efficiency versus
CW Output Power as a Function of Total IDQ
RF Device Data
Freescale Semiconductor
105
104
90
110 130 150 170
190 210 230 250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 140 W CW, and ηD = 45%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
Figure 6. MTTF versus Junction Temperature
MRF6S24140HR3 MRF6S24140HSR3
5
5 Page | ||
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| PDF Descargar | [ Datasheet MRF6S24140HR3.PDF ] | |
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