|
|
PDF STP80NS04ZB Data sheet ( Hoja de datos )
| Número de pieza | STP80NS04ZB | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STP80NS04ZB (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
STP80NS04ZB
N-CHANNEL CLAMPED 7.5mΩ - 80A TO-220
FULLY PROTECTED MESH OVERLAY™ MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STP80NS04ZB CLAMPED <0.008 Ω 80 A
s TYPICAL RDS(on) = 0.0075 Ω
s 100% AVALANCHE TESTED
s LOW CAPACITANCE AND GATE CHARGE
s 175 oC MAXIMUM JUNCTION
TEMPERATURE
DESCRIPTION
This fully clamped Mosfet is produced by using the latest
advanced Company’s Mesh Overlay process which is
based on a novel strip layout.
The inherent benefits of the new technology coupled with
the extra clamping capabilities make this product
particularly suitable for the harshest operation conditions
such as those encountered in the automotive
environment. Any other application requiring extra
ruggedness is also recommended.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s ABS, SOLENOID DRIVERS
s MOTOR CONTROL
s DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDG Drain-gate Voltage
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDG Drain Gate Current (continuous)
IGS
IDM(•)
Gate SourceCurrent (continuous)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate-Source ESD (HBM - C = 100pF, R=1.5 kΩ)
VESD(G-D) Gate-Drain ESD (HBM - C = 100pF, R=1.5 kΩ)
VESD(D-S) Drain-source ESD (HBM - C = 100pF, R=1.5 kΩ)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
Value
CLAMPED
CLAMPED
CLAMPED
80
60
± 50
± 50
320
200
1.33
4
4
4
-65 to 175
-40 to 175
Unit
V
V
V
A
A
mA
mA
A
W
W/°C
kV
kV
kV
°C
°C
May 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/6
1 page  
DIM.
A
C
D
D1
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.4
10.0
13.0
2.65
15.25
6.2
3.5
3.75
TO-220 MECHANICAL DATA
mm
TYP.
1.27
16.4
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.7
10.40
14.0
2.95
15.75
6.6
3.93
3.85
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.511
0.104
0.600
0.244
0.137
0.147
STP80NS04ZB
inch
TYP.
0.050
0.645
MAX.
0.181
0.051
0.107
0.027
0.034
0.067
0.067
0.203
0.106
0.409
0.551
0.116
0.620
0.260
0.154
0.151
L2
Dia.
L5
L7
L6
L9
L4
P011C
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet STP80NS04ZB.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STP80NS04Z | N - CHANNEL POWER MOSFET | ST Microelectronics |
| STP80NS04ZB | N-CHANNEL POWER MOSFET | ST Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |