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PDF MRF9210R3 Data sheet ( Hoja de datos )
| Número de pieza | MRF9210R3 | |
| Descripción | RF Power Field Effect Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9210/D
The RF MOSFET Line
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
MRF9210R3
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of this device make it ideal for large - signal, common source amplifier
applications in 26 volt base station equipment.
• Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 950 mA
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 40 Watts
Power Gain — 16.5 dB
Efficiency — 25.5%
Adjacent Channel Power —
750 kHz: - 46.2 dBc @ 30 kHz BW
1.98 MHz: - 60 dBc @ 30 kHz BW
• Internally Matched, Controlled Q, for Ease of Use
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz,
40 Watts Avg. N - CDMA
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
880 MHz, 200 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375G - 04, STYLE 1
NI - 860C3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
- 0.5, +15
565
3.2
- 65 to +150
200
Value (1)
0.31
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9210R3
1
1 page  
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
20 60
18
16 Gps
14 η
12
10
VDD = 26 Vdc
IDQ = 1900 mA
f1 = 879.5 MHz, f2 = 880.05 MHz
8 IMD
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain, Efficiency and IMD
versus Output Power
40
20
0
−20
−40
−60
20 40
18
Gps
16
η
14
VDD = 26 Vdc, IDQ = 1900 mA
f = 880 MHz
N−CDMA IS−95 Pilot, Sync, Paging
12 Traffic Codes 8 Through 13
20
0
−20
−40
10 ACPR 750 kHz
8 ALT 1.98 MHz
−60
−80
1 10 100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. N - CDMA Performance Output Power
versus Gain, ACPR, Efficiency
80
70
60
50
40
30 VDD = 26 Vdc, IDQ = 1900 mA
f = 880 MHz
20 N−CDMA IS−95 Pilot, Sync, Paging
Traffic Codes 8 Through 13
10
18 20 22 24 26 28 30 32 34
VDD, VOLTAGE (V)
Figure 9. Single - Carrier Maximum N - CDMA Linear
Output Power versus Drain Voltage
4.8
0 1.23 MHz BW
−10
−ACPR @
−20 30 kHz BW
−30
+ACPR @
30 kHz BW
−40
−50
−60
−70
−ALT @
30 kHz BW
−80
+ALT @
30 kHz BW
−90
−95.2
−2.5
−2.0 −1.5
−1.0 −0.5 0 0.5 1.0
f, FREQUENCY (MHz)
1.5 2.0
Figure 10. Typical N - CDMA Spectrum
2.5
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9210R3
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF9210R3.PDF ] | |
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