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PDF STRH40N25FSY3 Data sheet ( Hoja de datos )
| Número de pieza | STRH40N25FSY3 | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
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Features
STRH40N25FSY3
N-channel 250V - 0.084Ω - TO-254AA
Rad-hard low gate charge STripFET™ Power MOSFET
PRELIMINARY DATA
Type
STRH40N25FSY3
VDSS
250V
■ Low RDS(on)
■ Fast switching
■ Single event effect (SEE) hardened
■ Low total gate charge
■ Light weight
■ 100% avalanche tested
■ Application oriented characterization
■ Hermetically sealed
■ Heavy ion SOA
■ 100kRad TID
■ SEL & SEGR with 34Mev/cm²/mg LET ions
TO-254AA
Internal schematic diagram
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to improve immunity to
space effect. It is therefore suitable as power
switch in mainly high-efficiency DC-DC converters
and Motor Control applications. It is also intended
for any application with low gate charge drive
requirements.
Applications
■ Satellite
■ High reliability applications
Order codes
Part number
STRH40N25FSY1(1)
STRH40N25FSY3 (2)
Marking
RH40N25FSY1
RH40N25FSY3
Package
TO-254AA
TO-254AA
Packaging
Individual strip pack
Individual strip pack
1. Mil temp range
2. Space flights parts (full ESA flow screening)
March 2007
Rev 2
1/13
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
13
1 page  
STRH40N25FSY3
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 40A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 40A, di/dt = 100A/µs
VDD= 50V, Tj = 150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max Unit
36
144
1.5
484
8.4
35
A
A
V
ns
µC
A
2.2 Post-irradiation
The ST Rad-Hard Power MOSFETs are tested to verify the radiation capability. The
technology is extremely resistant to assurance well functioning of the device inside the
radiation environments. Every manufacturing lot is tested for total ionizing dose.
(@Tj=25°C up to 100Krad (a))
Table 8. On/off states
Symbol
Parameter
Test conditions
IDSS
IGSS
BVDSS
Zero gate voltage drain current
(VGS = 0)
80% BVDss
Gate body leakage current
(VDS = 0)
VGS = ±16V
Drain-to-source breakdown
voltage
ID = 1mA, VGS = 0V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on
resistance
VDS =VGS, ID = 1mA
VGS = 12V, ID = 20A
Min. Typ. Max. Unit
10 µA
±100 nA
250
2 4.5
0.084 0.1
V
V
Ω
a. According to ESCC 22900 specification, Co60 gamma rays, dose rags:0.1rad/sec.
5/13
5 Page 
STRH40N25FSY3
4 Package mechanical data
Package mechanical data
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
R1
R2
MIN.
13.59
13.59
20.07
6.32
1.02
3.53
16.89
0.89
12.95
TO-254AA MECHANICAL DATA
mm.
TYP
6.86
3.81
3.81
3.05
1.65
MAX.
13.84
13.84
20.32
6.60
1.27
3.78
17.40
1.14
14.50
0.71
1.0
MIN.
0.535
0.535
0.790
0.249
0.040
0.139
0.665
0.035
0.510
inch
TYP.
0.270
0.150
0.150
0.120
0.065
MAX.
0.545
0.545
0.80
0.260
0.050
0.149
0.685
0.045
0.570
0.025
0.040
11/13
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| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet STRH40N25FSY3.PDF ] | |
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