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PDF MRF7S19080HR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF7S19080HR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for TD - SCDMA and PCN - PCS/cellular radio
applications.
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PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 18 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 80 Watts CW
Peak Tuned Output Power
• Pout @ 1 dB Compression Point w 80 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF7S19080H
Rev. 0, 1/2007
MRF7S19080HR3
MRF7S19080HSR3
1930 - 1990 MHz, 24 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465- 06, STYLE 1
NI - 780
MRF7S19080HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S19080HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
VDD
Tstg
TC
TJ
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
Vdc
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 79 W CW
Case Temperature 79°C, 24 W CW
RθJC
0.60
0.69
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S19080HR3 MRF7S19080HSR3
1
1 page  
R1 R2
C6
C2 C3 C4 C5
C1
C12
C8
C9
C13
C10 C11
C7
HV7
2.1 GHz
NI780
Rev. 1
Figure 2. MRF7S19080HR3(HSR3) Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MRF7S19080HR3 MRF7S19080HSR3
5
5 Page 
R1
R2
C6
C12 C13
C8 C9
C2 C3 C4 C5
C10 C11
C1 C7
HV7
2.1 GHz
NI780
Rev. 1
Figure 18. MRF7S19080HR3(HSR3) Test Circuit Component Layout — TD - SCDMA
RF Device Data
Freescale Semiconductor
MRF7S19080HR3 MRF7S19080HSR3
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet MRF7S19080HR3.PDF ] | |
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