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MRF6S21100NR1 PDF даташит

Спецификация MRF6S21100NR1 изготовлена ​​​​«Freescale Semiconductor» и имеет функцию, называемую «RF Power Field Effect Transistors».

Детали детали

Номер произв MRF6S21100NR1
Описание RF Power Field Effect Transistors
Производители Freescale Semiconductor
логотип Freescale Semiconductor логотип 

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MRF6S21100NR1 Даташит, Описание, Даташиты
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and
TD - SCDMA applications.
TPPyAopuRt[email protected],C%FDuPMll rFAorbePaqeburifleiotnyrmcoyanBnCcaeCn:dDV,FCD.Dha=n2n8elVBoaltnsd, wIDidQth=
1050 mA,
= 3.84 MHz,
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Bandwidth
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
200°C Capable Plastic Package
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S21100N
Rev. 2, 1/2007
MRF6S21100NR1
MRF6S21100NBR1
2110 - 2170 MHz, 23 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S21100NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S21100NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TJ
- 0.5, +68
- 0.5, +12
- 65 to +175
200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 73°C, 23 W CW
RθJC
0.57
0.66
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
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MRF6S21100NR1 Даташит, Описание, Даташиты
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 330 μAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1050 mAdc)
Fixture Gate Quiescent Voltage (1)
(VDS = 28 Vdc, ID = 1050 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 3.3 Adc)
Dynamic Characteristics (2)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
IDSS
IDSS
IGSS
VGS(th)
VGS(Q)
VGG(Q)
VDS(on)
1
2.2
Crss
2
2.8
3.1
0.24
1.5
10 μAdc
1 μAdc
1 μAdc
3 Vdc
— Vdc
4.4 Vdc
— Vdc
— pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Gps 13 14.5 16 dB
Drain Efficiency
ηD 24 25.5 36 %
Intermodulation Distortion
IM3 - 47 - 37 - 35 dBc
Adjacent Channel Power Ratio
ACPR
- 50
- 40
- 38
dBc
Input Return Loss
IRL — - 12 - 10 dB
1. VGG = 11/10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part is internally matched both on input and output.
MRF6S21100NR1 MRF6S21100NBR1
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RF Device Data
Freescale Semiconductor









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MRF6S21100NR1 Даташит, Описание, Даташиты
VBIAS
R1
+
C1
B1
R2 C2
R3
C3 Z5
RF
INPUT
Z1
Z2
C7
Z3
C8
Z6
Z4
DUT
C4
Z12
Z7
Z8
C5
Z9
VSUPPLY
C6
RF
Z10 OUTPUT
C9
Z11
VSUPPLY
C10 C11 C12
Z1, Z10
Z2
Z3
Z4
Z5
Z6
0.743x 0.084Microstrip
0.893x 0.084Microstrip
0.175x 0.084Microstrip
0.420x 0.800Microstrip
1.231x 0.040Microstrip
0.100x 0.880Microstrip
Z7
Z8
Z9
Z11, Z12
PCB
0.259x 0.880Microstrip
0.215x 0.230Microstrip
0.787x 0.084Microstrip
1.171x 0.120Microstrip
Arlon AD250, 0.030, εr = 2.5
Figure 1. MRF6S21100NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S21100NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
B1 Ferrite Bead
25008051107Y0
C1
10 μF, 35 V Tantalum Capacitor
T491D106K035AT
C2 0.01 μF Chip Capacitor
C1825C103J1GAC
C3, C4, C10
5.1 pF Chip Capacitors
ATC600B5R1BT250XT
C5, C6, C11, C12
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
C7 10 pF Chip Capacitor
ATC600B100BT250XT
C8 1.1 pF Chip Capacitor
ATC600B1R1BT250XT
C9
5.1 pF Chip Capacitor (MRF6S21100NR1)
AT600B5R1BT250XT
8.2 pF Chip Capacitor (MRF6S21100NBR1)
ATC600B8R2BT250XT
R1 1 kΩ, 1/4 W Chip Resistor
CRCW12061000FKTA
R2
10 kΩ, 1/4 W Chip Resistor
CRCW12061001FKTA
R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKTA
Manufacturer
Fair - Rite
Kemet
Kemet
ATC
Murata
ATC
ATC
ATC
ATC
Vishay
Vishay
Vishay
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
3










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Номер в каталогеОписаниеПроизводители
MRF6S21100NR1RF Power Field Effect TransistorsFreescale Semiconductor
Freescale Semiconductor

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