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Номер произв MRF6S21100HSR3
Описание RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Производители Freescale Semiconductor
логотип Freescale Semiconductor логотип 



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MRF6S21100HSR3 Даташит, Описание, Даташиты
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and
TD - SCDMA applications.
PPTyAopuRtic==al2823.5-WcdaaBrtrti@serA0Wv.g0-.1,C%FDuMPll rAForbPeaeqbrufileoitnrymcoyannBcCaeCnfdDo,rFC.VhDaDnn=e2l 8BVanodltsw,idIDthQ
=
=
950
3.84
mA,
MHz,
Power Gain — 15.9 dB
Drain Efficiency — 27.6%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39.5 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S21100H
Rev. 7, 1/2007
MRF6S21100HR3
MRF6S21100HSR3
2110 - 2170 MHz, 23 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S21100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S21100HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
Tc
TJ
- 0.5, +68
- 0.5, +12
- 65 to +150
150
200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 77°C, 23 W CW
RθJC
0.45
0.52
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S21100HR3 MRF6S21100HSR3
1









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MRF6S21100HSR3 Даташит, Описание, Даташиты
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
3A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10 μAdc
IDSS
1 μAdc
IGSS
1 μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 μAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 950 mAdc)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VGS(th)
1
2
3 Vdc
VGS(Q)
2
2.8
4 Vdc
VDS(on)
0.1
0.21
0.3
Vdc
Crss — 1.5 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 23 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Gps 14.5 15.9 17.5 dB
Drain Efficiency
ηD 26 27.6 — %
Intermodulation Distortion
IM3 — - 37 - 35 dBc
Adjacent Channel Power Ratio
ACPR
- 39.5
- 38
dBc
Input Return Loss
IRL — - 16 - 9 dB
1. Part is internally matched both on input and output.
MRF6S21100HR3 MRF6S21100HSR3
2
RF Device Data
Freescale Semiconductor









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MRF6S21100HSR3 Даташит, Описание, Даташиты
B1
VBIAS
++
R2
R1 C1 C2 C4 C3 C5
RF
INPUT
Z1 Z2 Z3
C6
Z5
Z4
++
+
+ + VSUPPLY
C8 C9 C10 C11 C13 C12 C14
Z8
Z6 Z7 Z9 Z10 Z11
Z12
C7
RF
OUTPUT
DUT
Z1, Z12
Z2
Z3
Z4
Z5
Z6
1.250x 0.084Microstrip
1.070x 0.084Microstrip
0.330x 0.800Microstrip
0.093x 0.800Microstrip
1.255x 0.040Microstrip
0.160x 0.880Microstrip
Z7
Z8
Z9
Z10
Z11
PCB
0.320x 0.880Microstrip
0.120x 0.820Microstrip
0.035x 0.320Microstrip
0.335x 0.200Microstrip
0.650x 0.084Microstrip
Arlon GX - 0300 - 55 - 22, 0.030, εr = 2.55
Figure 1. MRF6S21100HR3(SR3) Test Circuit Schematic
Table 5. MRF6S21100HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
B1 Ferrite Bead
2743019447
C1
1.0 μF, 50 V Tantalum Capacitor
T491C105M050AT
C2
10 μF, 50 V Electrolytic Capacitor
EEV - HB1H100P
C3
1000 pF 100B Chip Capacitor
ATC100B102JT500XT
C4, C13
0.1 μF 100B Chip Capacitors
CDR33BX104AKWY
C5
5.1 pF Chip Capacitor
ATC100B5R1JT500XT
C6, C7
15 pF Chip Capacitors
ATC100B150JT500XT
C8
6.8 pF Chip Capacitors
ATC100B6R8JT500XT
C9, C10, C11, C12
22 μF, 35 V Tantalum Capacitors
T491X226K035AT
C14
100 μF, 50 V Electrolytic Capacitor
515D107M050BB6AE3
R1
1.0 kW, 1/8 W Chip Resistor
CRCW08051000FKTA
R2
10 W, 1/8 W Chip Resistor
CRCW080510R0FKTA
Manufacturer
Fair - Rite
Kemet
Panasonic
ATC
Kemet
ATC
ATC
ATC
Kemet
Vishay/Sprague
Vishay
Vishay
RF Device Data
Freescale Semiconductor
MRF6S21100HR3 MRF6S21100HSR3
3










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