MRF5S19130R3 Datasheet PDF - Motorola Semiconductors
| Part Number | MRF5S19130R3 | |
| Description | N-Channel Enhancement-Mode Lateral MOSFETs | |
| Manufacturers | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR
TECHFNreICeAsLcDaAlTeASemiconductor,
Inc.
Order this document
by MRF5S19130/D
MRF5S19130R3 and MRF5S19130SR3 replaced by MRF5S19130HR3 and
MRF5S19130HSR3. “H” suffix indicates lower thermal resistance package.
The RF MOSFET Line
MRF5S19130R3
RF Power Field Effect Transistors MRF5S19130SR3
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• TIISDyQ-p9i=c5a1lC22D0-0MCmAarA(rPi,eifrl1oNt=,-SC1y9Dn5Mc8,A.7P5PageMirnfHogzr,m,Tfa2ran=fcfiec19fCo6or1dV.2eD5sDM8=HT2hz8roVuoglths,13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 26 Watts Avg.
Power Gain — 13 dB
Efficiency — 25%
IM3 — - 37 dBc
ACPR — - 51 dB
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
110 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Qualified Up to a Maximum of 32 V Operation
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1990 MHz, 26 W AVG.,
2 x N - CDMA, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF5S19130R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S19130SR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 110 W CW
Case Temperature 80°C, 26 W CW
Symbol
VDSS
VGS
PD
Tstg
TJ
CW
Symbol
RθJC
Value
65
- 0.5, +15
324
1.85
- 65 to +150
200
110
Max
0.54
0.60
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Watts
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MMoOtorToOla,RInOc.L2A00R3 F DEVICE DATA
MRF5S19130R3 MRF5S19130SR3
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1
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Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
15 40
14
13 Gps
35
30
12 η
11
10 IRL
9
VDD = 28 Vdc, Pout = 26 W (Avg.), IDQ = 1200 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
25
20
−10
−20
8 IM3
−30
7
ACPR
6
−40
−50
5 −60
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
−5
−10
−15
−20
−25
−30
16
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
15
IDQ = 1800 mA
14
1500 mA
13 1200 mA
12 900 mA
11
600 mA
10
1
10 100 200
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
−20
−25
−30 3rd Order
−35
−40 5th Order
−45
7th Order
−50
−55
−60
0.1
VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA
Two−Tone Measurements, Center Frequency = 1960 MHz
1 10
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
−25
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
−30 Two−Tone Measurement, 2.5 MHz Tone Spacing
−35
IDQ = 1800 mA
−40
600 mA
−45
−50
1500 mA
1200 mA
−55
900 mA
−60
1
10
100 200
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
60
59
Ideal
58
57
P3dB = 53.11 dBm (205.57 W)
56
55
P1dB = 52.54 dBm (179.61 W)
54
53
Actual
52
51
50 VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 8 µsec (on), 1 msec (off)
49
48
Center Frequency = 1960 MHz
35 36 37 38 39 40 41 42 43 44 45
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
MRF5S19130R3 MRF5S19130SR3
For More Information On This Product,
5
Go to: www.freescale.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MRF5S19130R3 electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
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