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PDF BSO215C Data sheet ( Hoja de datos )
| Número de pieza | BSO215C | |
| Descripción | SIPMOS Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Preliminary data
BSO 215 C
SIPMOS® Small-Signal-Transistor
Features
• Dual N- and P -Channel
• Enhancement mode
• Logic Level
• Avalanche rated
• dv/dt rated
Product Summary
Drain source voltage
Drain-Source on-state
resistance
VDS
RDS(on)
Continuous drain current ID
N
20
0.1
3.7
P
-20 V
0.1 Ω
-3.7 A
Type
BSO 215 C
Package
SO 8
Ordering Code
Q67041-S4025
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA = 25 °C
TA = 70 °C
Pulsed drain current
TA = 25 °C
Avalanche energy, single pulse
ID = 3 A, VDD = 15 V, RGS = 25 Ω
ID = -3.7 A , VDD = -15 V, RGS = 25 Ω
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt, Tjmax = 150 °C
IS = 3 A, VDS = 16 V, di/dt = 200 A/µs
IS = -2.7 A, VDS = -16 V, di/dt = -200 A/µs
Gate source voltage
Power dissipation
TA = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
NP
3.7
3
14.8
-3.7
-3
-14.8
26 -
- 68
0.2 0.2
6-
-6
±20 ±20
22
-55...+150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
1999-09-22
1 page  
Power Dissipation (N-Ch.)
Ptot = f (TA)
Preliminary data
BSO 215 C
Power Dissipation (P-Ch.)
Ptot = f (TA)
BSO 215 C
2.2
W
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 °C 160
TA
Drain current (N-Ch.)
ID = f (TA)
parameter: VGS≥ 10 V
BSO 215 C
4.0
A
BSO 215 C
2.2
W
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 °C 160
TA
Drain current (P-Ch.)
ID = f (TA)
parameter: VGS≥ -10 V
BSO 215 C
-4.0
A
3.2 -3.2
2.8 -2.8
2.4 -2.4
2.0 -2.0
1.6 -1.6
1.2 -1.2
0.8 -0.8
0.4 -0.4
0.0
0
20 40 60 80 100 120 °C 160
TA
0.0
0
20 40 60 80 100 120 °C
160
TA
Page 5
1999-09-22
5 Page 
Preliminary data
BSO 215 C
Avalanche Energy EAS = f (Tj) (N-Ch.)
parameter: ID = 3 A, VDD = 15 V
RGS = 25 Ω
30
Avalanche Energy EAS = f (Tj)
parameter: ID = -3.7 A , VDD = -15 V
RGS = 25 Ω
70
mJ mJ
50
20
40
15
30
10
20
5
10
0
25 45 65 85 105 125 °C 165
Tj
Typ. gate charge (N-Ch.)
VGS = f (QGate)
parameter: ID = 3.7 A
BSO 215 C
16
V
0
25 45 65 85 105 125 °C 165
Tj
Typ. gate charge (P-Ch.)
VGS = f (QGate)
parameter: ID = -3.7 A
BSO 215 C
-16
V
12
10
8
0,2 VDS max
6
4
2
0
024
-12
-10
0,8 VDS max
-8
-6 0,2 VDS max
-4
0,8 VDS max
-2
6
8 nC
12
QGate
0
0
2
4
6
8 10 12 14 16 nC 19
QGate
Page 11
1999-09-22
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BSO215C.PDF ] | |
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