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TPC8020-H PDF даташит

Спецификация TPC8020-H изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую «Field Effect Transistor Silicon N Channel MOS Type».

Детали детали

Номер произв TPC8020-H
Описание Field Effect Transistor Silicon N Channel MOS Type
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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TPC8020-H Даташит, Описание, Даташиты
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TPC8020-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High-Speed U-MOSIII)
TPC8020-H
High-Speed and High-Efficiency DC-DC Converter
Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
Small footprint due to small and thin package
High-speed switching
Small gate charge: Qg = 23 nC (typ.)
Low drain-source ON resistance: RDS (ON) = 6.8 mO (typ.)
High forward transfer admittance: |Yfs| =32 S (typ.)
Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
Enhancement mode: V th = 1.1 to 2.3 V (V DS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
ID P
PD
PD
EA S
IAR
EAR
Tc h
Tstg
30
30
±20
13
52
1.9
1.0
110
13
0.084
150
55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with
caution.
JEDEC
?
JEITA
?
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8765
1234
1 2004-07-06









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TPC8020-H Даташит, Описание, Даташиты
Thermal Characteristics
Characteristics
Symbol
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Rth (ch-a)
Rth (ch-a)
Max
65.8
125
Unit
°C/W
°C/W
Marking (Note 5)
TPC8020-H
TPC8020
H
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a) (b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 , IAR = 13 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: on lower left of the marking indicates Pin 1.
* Weekly code: (Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
2 2004-07-06









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TPC8020-H Даташит, Описание, Даташиты
TPC8020-H
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Gate switch charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
|Yf s|
Ciss
Crss
Coss
VGS = ±16 V, V DS = 0 V
VDS = 30 V, V GS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = −20 V
VDS = 10 V, ID = 1 mA
VGS = 4.5 V , ID = 6.5 A
VGS = 10 V , ID = 6.5 A
VDS = 10 V , ID = 6.5 A
VDS = 10 V , VGS = 0 V , f = 1 MHz
tr
VGS10 V
ton 0 V
ID = 6.5 A
VOUT
Min
30
15
1.1
16
tf
toff
Qg
Qgs1
Qgd
QSW
VDD ∼− 15 V
Duty <= 1%, tw = 10 µs
VDD ∼− 24 V, VGS = 10 V , ID = 13 A
VDD ∼− 24 V, VGS = 5 V , ID = 13 A
VDD ∼− 24 V, VGS = 10 V , ID = 13 A
Typ. Max
9.5
6.8
32
1395
140
525
±10
10
2.3
13
9
3
9
8
29
23
13
4.5
4.9
6.9
Unit
µA
µA
V
V
m
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current Pulse (Note 1)
Forward voltage (diode)
Symbol
ID R P
VDSF
Test Condition
IDR = 13 A, V GS = 0 V
Min Typ. Max Unit
  52 A
  −1.2 V
3 2004-07-06










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Номер в каталогеОписаниеПроизводители
TPC8020-HField Effect Transistor Silicon N Channel MOS TypeToshiba Semiconductor
Toshiba Semiconductor

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