DataSheet26.com

NSR15TW1 PDF даташит

Спецификация NSR15TW1 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Triple RF Schottky Diode».

Детали детали

Номер произв NSR15TW1
Описание Triple RF Schottky Diode
Производители ON Semiconductor
логотип ON Semiconductor логотип 

5 Pages
scroll

No Preview Available !

NSR15TW1 Даташит, Описание, Даташиты
www.DataSheet4U.com
NSR15TW1
Triple RF
Schottky Diode
These diodes are designed for analog and digital applications,
including DC based signal detection and mixing applications.
Features:
Low Capacitance (<1 pF)
Low VF (390 mV typical @ 1 mA)
Low VFD (1 mV typical @ 1 mA)
Benefits:
Reduced Parasitic Losses
Accurate Signal Measurement
MAXIMUM RATINGS
Rating
Symbol
Peak Reverse Voltage
Forward Current
Operating and Storage
Temperature Range
VR
IF
TJ, Tstg
ESD Rating: Class 1 per Human Body Model
ESD Rating: Class A per Machine Model
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum Thermal Resistance –
Junction to Ambient
RqJA
Max
15
30
–65 to
+150
Value
500
Unit
V
mA
°C
Unit
°C/W
http://onsemi.com
RF SCHOTTKY
BARRIER DIODES
15 VOLTS, 30 mA
65 4
12 3
65 4
12 3
SC–88
CASE 419B
STYLE 15
MARKING DIAGRAM
OZ M
OZ = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
NSR15TW1T2 SC–88 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
February, 2002 – Rev. 1
1
Publication Order Number:
NSR15TW1/D









No Preview Available !

NSR15TW1 Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS
Characteristic
Breakdown Voltage (IR = 10 mA)
Reverse Leakage (VR = 1 V)
Forward Voltage (IF = 1 mA)
Forward Voltage (IF = 10 mA)
Delta VF (IF = 1 mA, All Diodes)
Capacitance (VF = 0 V, f = 1 MHz)
NSR15TW1
Symbol
Min
Typ
Max Unit
VBR
15
20
–V
IR
2 50 nA
VF1 – 390 415 mV
VF2
DVF
530 680 mV
1 15 mV
CT – 0.8 1 pF
100 100 k
10
75°C
1
125°C
0.1
25°C
–25°C
10 k
1k
100
10
125°C
75°C
25°C
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6
VF, FORWARD VOLTAGE (V)
0.7
Figure 1. Forward Current versus Forward
Voltage at Temperatures
1
0 5 10 15
VR, REVERSE VOLTAGE (V)
Figure 2. Reverse Current versus Reverse
Voltage
1
0.9
0.8
0.7
0.6
0.5
0
1
23
45
678
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance versus Reverse
Voltage
1000
100
10
1
0.1
1 10
IF, FORWARD CURRENT (mA)
100
Figure 4. Dynamic Resistance versus Forward
Current
http://onsemi.com
2









No Preview Available !

NSR15TW1 Даташит, Описание, Даташиты
NSR15TW1
100 100 100 10
IF (left scale)
10 10
IF (left scale)
DVF (right scale)
10
1
11
DVF (right scale)
0.1
0.3
0.4 0.5 0.6 0.7
VF, FORWARD VOLTAGE (V)
0.1
0.8
Figure 5. Typical VF Match at Mixer Bias Levels
1
0.175
0.225
0.275
VF, FORWARD VOLTAGE (V)
0.1
0.325
Figure 6. Typical VF Match at Detector Bias Levels
1
DC Bias = 3 mA
10
1
0.1
0.1
0.01
RF IN
NSR15TW1 VO
0.001
0.01 18 nH
0.0001
3.3 nH 100 pF
100 kW
0.00001
RF IN NSR15TW1
68 W
100 pF
VO
4.7 kW
0.001
–40 –35
–30 –25 –20 –15 –10
Pin, INPUT POWER (dBm)
–5
0.000001
0 –20 –15 –10
–5 0 5 10 15 20
Pin, INPUT POWER (dBm)
25 30
Figure 7. Typical Output Voltage versus Input Power,
Small Signal Detector Operating at 850 MHz
Figure 8. Typical Output Voltage versus Input
Power, Large Signal Detector Operating at 915 MHz
12
10
9
8
7
6
–2 0 2 4 6 8 10 12
LOCAL OSCILLATOR POWER (dBm)
Figure 9. Typical Conversion Loss versus L.O. Drive,
2.0 GHz
http://onsemi.com
3










Скачать PDF:

[ NSR15TW1.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NSR15TW1Triple RF Schottky DiodeON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск