MT3S40T PDF даташит
Спецификация MT3S40T изготовлена «Toshiba Semiconductor» и имеет функцию, называемую «VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION». |
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Детали детали
Номер произв | MT3S40T |
Описание | VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION |
Производители | Toshiba Semiconductor |
логотип |
4 Pages
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
MT3S40T
MT3S40T
VCO OSCILLETOR STAGE
UHF LOW NOISE AMPLIFIER APPLICATION
Unit: mm
FEATURES
· Low Noise Figure :NF=1.2dB (@f=2GHz)
· High Gain:|S21e|2=11.0dB (@f=2GHz)
Marking
3
Q6
12
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Current
Base-Current
Collector Power dissipation
Junction temperature
Storage temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
8
4.5
1.5
70
35
100
150
−55~150
Unit
V
V
V
mA
mA
mW
°C
°C
TESM
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight:0.0022g (typ.)
1 2002-08-19
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Microwave Characteristics (Ta = 25°C)
Characteristics
Transition Frequency
Insertion Gain
Noise Figure
Symbol
Test Condition
fT
|S21e|2(1)
|S21e|2(2)
NF(1)
NF(2)
VCE=3V, IC=20mA, f=2GHz
VCE=3V, IC=20mA, f=1GHz
VCE=3V, IC=20mA, f=2GHz
VCE=3V, IC=5mA, f=1GHz
VCE=3V, IC=5mA, f=2GHz
MT3S40T
Min Typ. Max Unit
13 17
- GHz
14.5 16.5
-
dB
9 11 - dB
- 0.9 - dB
- 1.2 1.8 dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector Cut-off Current
Emitter Cut-off Current
ICBO
IEBO
VCB=8V, IE=0
VEB=1V, IC=0
DC Current Gain
hFE VCE=3V, IC=20mA
Output Capacitance
Reverse Transistor Capacitance
Cob VCB=1V, IE=0, f=1MHz
Cre VCB=1V, IE=0, f=1MHz (Note 1)
Note 1: Cre is measured by 3 terminal method with capacitance bridge.
Min Typ. Max Unit
- - 1 µA
- - 1 µA
70 - 140 -
-
0.77 1.2
pF
-
0.44 0.8
pF
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
2 2002-08-19
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20 |S21e|2-IC
VCE=3V
2V
15
1V
10
5
f=1GHz
Ta=25℃
0
1 10 100
COLLECTOR CURRENT IC(mA)
20 fT-IC
VCE=3V
15 2V
10
5
0
1
1V
f=2GHz
Ta=25℃
10
COLLECTOR CURRENT IC(mA)
100
MT3S40T
15 |S21e|2-IC
VCE=3V
10 2V
1V
5
f=2GHz
Ta=25℃
0
1 10 100
COLLECTOR CURRENT IC(mA)
1.0 Cre,Cob-VCB
IE=0
0.9 f=1MHz
0.8 Ta=25℃
0.7
Cob
0.6
0.5
0.4
0.3 Cre
0.2
0.1
0.0
0.1 1
10
COLLECTOR-BASE VOLTAGE VCB(V)
3.5 NF,Ga-IC
14
3.0 12
Ga
2.5 NF 10
2.0 8
1.5 6
1.0
0.5
0.0
1
4
f=2GHz
VCE=3V
Ta=25℃
2
0
10 100
COLLECTOR CURRENT IC(mA)
3
120 PC-Ta
100
80
60
40
20
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta(℃)
2002-08-19
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Номер в каталоге | Описание | Производители |
MT3S40T | VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION | Toshiba Semiconductor |
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