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MT3S40T PDF даташит

Спецификация MT3S40T изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую «VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION».

Детали детали

Номер произв MT3S40T
Описание VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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MT3S40T Даташит, Описание, Даташиты
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
MT3S40T
MT3S40T
VCO OSCILLETOR STAGE
UHF LOW NOISE AMPLIFIER APPLICATION
Unit: mm
FEATURES
· Low Noise Figure :NF=1.2dB (@f=2GHz)
· High Gain:|S21e|2=11.0dB (@f=2GHz)
Marking
3
Q6
12
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Current
Base-Current
Collector Power dissipation
Junction temperature
Storage temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
8
4.5
1.5
70
35
100
150
55~150
Unit
V
V
V
mA
mA
mW
°C
°C
TESM
JEDEC
JEITA
TOSHIBA
2-1B1A
Weight:0.0022g (typ.)
1 2002-08-19









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MT3S40T Даташит, Описание, Даташиты
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition Frequency
Insertion Gain
Noise Figure
Symbol
Test Condition
fT
|S21e|2(1)
|S21e|2(2)
NF(1)
NF(2)
VCE=3V, IC=20mA, f=2GHz
VCE=3V, IC=20mA, f=1GHz
VCE=3V, IC=20mA, f=2GHz
VCE=3V, IC=5mA, f=1GHz
VCE=3V, IC=5mA, f=2GHz
MT3S40T
Min Typ. Max Unit
13 17
- GHz
14.5 16.5
-
dB
9 11 - dB
- 0.9 - dB
- 1.2 1.8 dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector Cut-off Current
Emitter Cut-off Current
ICBO
IEBO
VCB=8V, IE=0
VEB=1V, IC=0
DC Current Gain
hFE VCE=3V, IC=20mA
Output Capacitance
Reverse Transistor Capacitance
Cob VCB=1V, IE=0, f=1MHz
Cre VCB=1V, IE=0, f=1MHz (Note 1)
Note 1: Cre is measured by 3 terminal method with capacitance bridge.
Min Typ. Max Unit
- - 1 µA
- - 1 µA
70 - 140 -
-
0.77 1.2
pF
-
0.44 0.8
pF
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
2 2002-08-19









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MT3S40T Даташит, Описание, Даташиты
20 |S21e|2-IC
VCE=3V
2V
15
1V
10
5
f=1GHz
Ta=25
0
1 10 100
COLLECTOR CURRENT IC(mA)
20 fT-IC
VCE=3V
15 2V
10
5
0
1
1V
f=2GHz
Ta=25
10
COLLECTOR CURRENT IC(mA)
100
MT3S40T
15 |S21e|2-IC
VCE=3V
10 2V
1V
5
f=2GHz
Ta=25
0
1 10 100
COLLECTOR CURRENT IC(mA)
1.0 Cre,Cob-VCB
IE=0
0.9 f=1MHz
0.8 Ta=25
0.7
Cob
0.6
0.5
0.4
0.3 Cre
0.2
0.1
0.0
0.1 1
10
COLLECTOR-BASE VOLTAGE VCB(V)
3.5 NF,Ga-IC
14
3.0 12
Ga
2.5 NF 10
2.0 8
1.5 6
1.0
0.5
0.0
1
4
f=2GHz
VCE=3V
Ta=25
2
0
10 100
COLLECTOR CURRENT IC(mA)
3
120 PC-Ta
100
80
60
40
20
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta()
2002-08-19










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