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PDF MRF7S18170HSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF7S18170HSR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Motorola Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1805 to
1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
• 6T144yp0Di0cPamCl ASH,inwPgoilteuht-5=C0a5%r0riCWerlaipWtptsi-nCAgDv,gMC.,hAFaPunlnel erFflorBermqaunaednnwcceidy:tVBhDa=Dn3d=.,82348GMPVHoPlztTs,e,InsIDtpQuMt=oSdiegln1a,l
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 17.5 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1840 MHz, 170 Watts CW
Peak Tuned Output Power
• Pout @ 1 dB Compression Point w 170 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF7S18170H
Rev. 0, 10/2006
MRF7S18170HR3
MRF7S18170HSR3
1805 - 1880 MHz, 50 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF7S18170HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF7S18170HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
VDD
Tstg
TC
TJ
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
Vdc
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 84°C, 170 W CW
Case Temperature 79°C, 50 W CW
RθJC
0.27
0.30
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S18170HR3 MRF7S18170HSR3
1
1 page  
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R2
R3
C2
C4
C3
C18 C19
R1
C1
C20
C13
C10 C17
C11 C12
C9
C8
C14 C15
C5 C16 C6 C7
MRF7S18170H
Rev. 4
Figure 2. MRF7S18170HR3 Test Circuit Component Layout — NI - 880
RF Device Data
Freescale Semiconductor
MRF7S18170HR3 MRF7S18170HSR3
5
5 Page 
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f = 1920 MHz
Zload
f = 1760 MHz
Zo = 10 Ω
f = 1760 MHz
Zsource
f = 1920 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg.
f
MHz
Zsource
W
Zload
W
1760
1.93 - j6.00
1.13 - j2.65
1780
1800
1.95 - j6.10
1.99 - j6.18
1.05 - j2.45
0.97 - j2.29
1820
1840
1860
1880
1900
1920
1.95 - j6.22
1.85 - j6.30
1.71 - j6.26
1.55 - j6.25
1.39 - j6.20
1.23 - j6.15
0.90 - j2.12
0.85 - j2.00
0.81 - j1.84
0.75 - j1.70
0.70 - j1.54
0.67 - j1.38
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z source
Z load
Figure 18. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF7S18170HR3 MRF7S18170HSR3
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet MRF7S18170HSR3.PDF ] | |
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