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7MBR100SD060 PDF даташит

Спецификация 7MBR100SD060 изготовлена ​​​​«Fuji Electric» и имеет функцию, называемую «PIM/Built-in converter».

Детали детали

Номер произв 7MBR100SD060
Описание PIM/Built-in converter
Производители Fuji Electric
логотип Fuji Electric логотип 

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7MBR100SD060 Даташит, Описание, Даташиты
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7MBR100SD060
PIM/Built-in converter with thyristor
and brake (S series)
600V / 100A / PIM
IGBT Modules
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage(Diode)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Surge 0n-state current (Non-Repetitive)
Junction temperature
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Junction temperature (except Thyristor)
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
Symbol
VCES
VGES
IC
ICP
-IC
PC
VCES
VGES
IC
ICP
PC
VRRM
VDRM
VRRM
IT(AV)
ITSM
Tjw
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Condition
Continuous
1ms
1 device
Continuous
1ms
1 device
50Hz/60Hz sine wave
Tj=125°C, 10ms half sine wave
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
Rating
600
±20
100
200
100
400
600
±20
50
100
200
600
800
800
100
1050
125
800
100
700
2450
+150
-40 to +125
AC 2500
AC 2500
1.7 *1
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26
should be connected together and shorted to copper base.
Unit
V
V
A
A
A
W
V
V
A
A
W
V
V
V
A
A
°C
V
A
A
A2s
°C
°C
V
V
N·m









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7MBR100SD060 Даташит, Описание, Даташиты
IGBT Module
7MBR100SD060
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Condition
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
off-state current
Reverse current
Gate trigger current
Gate trigger voltage
On-state voltage
Forward on voltage
Reverse current
Resistance
B value
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
tr
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
IDM
IRRM
IGT
VGT
VTM
VFM
IRRM
R
B
VCE=600V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=100mA
VGE=15V, Ic=100A chip
terminal
VGE=0V, VCE=10V, f=1MHz
VCC=300V
IC=100A
VGE=±15V
RG=24
IF=100A
chip
terminal
IF=100A
VCES=600V, VGE=0V
VCE=0V, VGE=±20V
IC=50A, VGE=15V chip
terminal
VCC=300V
IC=50A
VGE=±15V
RG=51
VR=600V
VDM=800V
VRM=800V
VD=6V, IT=1A
VD=6V, IT=1A
ITM=100A
chip
terminal
IF=100A
chip
terminal
VR=800V
T=25°C
T=100°C
T=25/50°C
Characteristics
Min.
Typ.
Max.
250
200
5.5 7.8
8.5
1.8
2.15 2.6
10000
0.45 1.2
0.25
0.6
0.40
1.0
0.05
0.35
1.6
1.95 2.7
300
250
200
1.8
2.05 2.6
0.45 1.2
0.25 0.6
0.40 1.0
0.05 0.35
250
1.0
1.0
100
2.5
1.0 1.15
1.15
1.1
1.2 1.5
250
5000
465 495
520
3305
3375
3450
Unit
µA
nA
V
V
pF
µs
V
ns
µA
nA
V
µs
µA
mA
mA
mA
V
V
V
µA
K
Thermal resistance Characteristics
Item
Symbol
Condition
Inverter IGBT
Thermal resistance ( 1 device )
Rth(j-c)
Inverter FWD
Brake IGBT
Thyristor
Converter Diode
Contact thermal resistance *
Rth(c-f)
With thermal compound
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Min.
Characteristics
Typ.
Max.
0.05
0.31
0.70
0.63
0.35
0.47
Unit
°C/W









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7MBR100SD060 Даташит, Описание, Даташиты
IGBT Module
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C(typ.)
250
VGE= 20V 15V
12V
200
150
100
50
10V
0
012345
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
250
Tj= 25°C Tj= 125°C
200
150
100
50
0
01234
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
50000 VGE=0V, f= 1MHz, Tj= 25°C
10000
5000
Cies
1000
500
0
Coes
Cres
5 10 15 20 25 30
Collector - Emitter voltage : VCE [ V ]
35
7MBR100SD060
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125°C(typ.)
250
VGE= 20V 15V
12V
200
150
100
10V
50
0
012345
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C(typ.)
10
8
6
4
Ic=200A
2 Ic=100A
Ic= 50A
0
5 10 15 20 25
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=100A, Tj= 25°C
500 25
400 20
300 15
200 10
100 5
00
0 100 200 300 400 500 600
Gate charge : Qg [ nC ]










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Номер в каталогеОписаниеПроизводители
7MBR100SD060PIM/Built-in converterFuji Electric
Fuji Electric

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