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AO3700 PDF даташит

Спецификация AO3700 изготовлена ​​​​«Alpha & Omega Semiconductors» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв AO3700
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители Alpha & Omega Semiconductors
логотип Alpha & Omega Semiconductors логотип 

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AO3700 Даташит, Описание, Даташиты
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AO3700
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO3700 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO3700 is Pb-free (meets ROHS & Sony
259 specifications). AO3700L is a Green Product ordering
option. AO3700 and AO3700L are electrically identical.
Features
VDS (V) = 30V
ID = 3.3A (VGS = 10V)
RDS(ON) < 65m(VGS = 10V)
RDS(ON) < 75m(VGS = 4.5V)
RDS(ON) < 160m(VGS = 2.5V)
SCHOTTKY
VDS (V) = 20V, IF = 1A, VF<[email protected]
SOT-23-5
Top View
G 15 D
S2
A 34 K
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current A
Pulsed Drain Current B
TA=25°C
TA=70°C
ID
IDM
Schottky reverse voltage
VKA
Continuous Forward Current A
Pulsed Forward Current B
TA=25°C
TA=70°C
IF
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient A
t 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient A
t 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
DK
SA
MOSFET
30
±12
3.3
2.6
10
1.15
0.7
-55 to 150
Typ
80.3
117
43
109.4
136.5
58.5
Schottky
20
2
1
10
0.92
0.59
-55 to 150
Max
110
150
80
135
175
80
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.









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AO3700 Даташит, Описание, Даташиты
AO3700
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=3.3A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=3.0A
VGS=2.5V, ID=1A
Forward Transconductance
VDS=5V, ID=3.3A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=15V, ID=3.3A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=4.7,
tD(off)
Turn-Off DelayTime
RGEN=6
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=3.3A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=3.3A, dI/dt=100A/µs
SCHOTTKY PARAMETERS
VF Forward Voltage Drop
Irm Maximum reverse leakage current
CT Junction Capacitance
trr Schottky Reverse Recovery Time
Qrr Schottky Reverse Recovery Charge
IF=0.5A
VR=16V
VR=16V, TJ=125°C
VR=10V
IF=1A, dI/dt=100A/µs
IF=1A, dI/dt=100A/µs
Min
30
1
10
Typ
1.4
51
64
60
100
11.7
0.81
226
39
29
1.4
4.6
1.4
0.55
2.6
3.2
14.5
2.1
10.2
3.8
0.39
34
5.2
0.8
Max Units
V
1
5
µA
100 nA
2V
A
65
90
m
75 m
160 m
S
1V
2.5 A
270 pF
pF
pF
2.5
5.5 nC
nC
nC
ns
ns
ns
ns
13 ns
nC
0.5 V
0.1 mA
20
pF
10 ns
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating. Rev0: October 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.









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AO3700 Даташит, Описание, Даташиты
AO3700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10V
12
9
3.5V
4V
6V
3V
10
8
6
VDS=5V
6
VGS=2.5V
3
0
01234
VDS (Volts)
Fig 1: On-Region Characteristics
5
200
175
150 VGS=2.5V
125
100
75 VGS=4.5V
50
25 VGS=10V
0
0 2 4 6 8 10
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
125°
80
70
60
ID=3.3A
50
25°C
40
0 2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4
51
125°C
2 60 25°C
100
0
0 0.5 1 1.5 2 2.5 3 3.5
VGS(Volts)
Figure 2: Transfer Characteristics
1.8 270
VGS=4.5V
1.6
ID=3.0A
1.7
1.4 VIGD3S==.361.03VA
1.2
VGS=2.5V
1 ID=1A
0.8
0
13
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
1.0E+01
1.0E+00
1.0E-01
1.0E-02
125°C
1.0E-03
1.0E-04
25°C
1.0E-05
0.0
0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
Alpha & Omega Semiconductor, Ltd.










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