AF4410N PDF даташит
Спецификация AF4410N изготовлена «Anachip» и имеет функцию, называемую «N-Channel Enhancement Mode Power MOSFET». |
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Детали детали
Номер произв | AF4410N |
Описание | N-Channel Enhancement Mode Power MOSFET |
Производители | Anachip |
логотип |
6 Pages
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N-Channel Enhancement Mode Power MOSFET
AF4410N
Features
- Simple Drive Requirement
- Low On-resistance
- Fast Switching
Product Summary
BVDSS (V)
30
RDS(ON) (mΩ)
13.5
ID (A)
10
General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SO-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
Pin Assignments
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Pin Descriptions
Pin Name
S
G
D
Description
Source
Gate
Drain
Ordering information
A X 4410N X X X
Feature
F :MOSFET
PN
Package
S: SO-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Aug 30, 2005
1/5
No Preview Available ! |
N-Channel Enhancement Mode Power MOSFET
AF4410N
Absolute Maximum Ratings
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Parameter
ID Continuous Drain Current (Note 1)
IDM
PD
TSTG
TJ
Pulsed Drain Current (Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
TA=25ºC
TA=70ºC
TA=25ºC
Thermal Data
Symbol
Parameter
Rthj-amb Thermal Resistance Junction-ambient (Note 1)
Max.
Rating
30
±25
10
8
50
2.5
0.02
-55 to 150
-55 to 150
Maximum
50
Units
V
V
A
A
W
W/ºC
ºC
ºC
Units
ºC/W
Electrical Characteristics at TJ=25ºC unless otherwise specified
Symbol
Parameter
Test Conditions
Min. Typ.
BVDSS
∆BVDSS / ∆TJ
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Reference to 25oC,
Coefficient
ID=1mA
Static Drain-Source
On-Resistance (Note 3)
VGS=10V, ID=10A
VGS=4.5V, ID=5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=15V, ID=10A
Drain-Source Leakage Current
(TJ=25oC)
VDS=30V, VGS=0V
Drain-Source Leakage Current
(TJ=70oC)
VDS=24V, VGS=0V
Gate-Source Leakage
VGS=±25V
Total Gate Charge (Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
ID=10A,
VDS=15V,
VGS=5V
Turn-On Delay Time (Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
VDS=25V,
ID=1A,
RG=3.3Ω, VGS=5V
RD=25Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V,
VDS=15V,
f=1.0MHz
30 -
- 0.037
--
--
1-
- 20
--
--
--
- 13.5
-4
-7
- 14
- 16
- 21
- 15
- 1160
- 240
- 165
Max.
-
-
13.5
22
3
-
1
25
±100
-
-
-
-
-
-
-
-
-
-
Units
V
V/oC
mΩ
V
S
uA
nA
nC
ns
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ.
VSD Forward On Voltage (Note 3)
IS=2.1A, VGS=0V
--
trr Reverse Recovery Time
IS=5A, VGS=0V,
- 17.1
Qrr Reverse Recovery Charge
dl/dt=100A/µs
- 12
Note 1: Surface mounted on 1 in2 copper pad of FR4 board, 125oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
Max.
1.2
-
-
Unit
V
ns
nC
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Aug 30, 2005
2/5
No Preview Available ! |
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics
AF4410N
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Aug 30, 2005
3/5
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