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OM6055SJ Datasheet Download - Omnirel

Номер произв OM6055SJ
Описание (OM6050SJ - OM6055SJ) HIGH CURRENT MOSFET
Производители Omnirel
логотип Omnirel логотип 

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OM6055SJ Даташит, Описание, Даташиты
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OM6050SJ OM6052SJ OM6054SJ
OM6051SJ OM6053SJ OM6055SJ
HIGH CURRENT MOSFET IN ISOLATED, TO-267
HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
High Current, High Voltage 100V Thru 1000V,
Up To 100 Amp N-Channel, Size 7 MOSFETs,
High Energy Capability
FEATURES
• Isolated Hermetic Metal Package
• Size 7 Die, High Energy
• Fast Switching, Low Drive Current
• Ease Of Paralleling For Added Power
• Low RDS(on)
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. This series also features avalanche high energy capability
at elevated temperatures.
MAXIMUM RATINGS @ 25°C
PART NUMBER
OM6050SJ
OM6051SJ
OM6052SJ
OM6053SJ
OM6054SJ
OM6055SJ
VDS
100 V
200 V
500 V
600 V
800 V
1000 V
RDS(on)
.014
.030
.160
.230
.500
.800
ID (Continuous)
100 A
55 A
30 A
25 A
18 A
10 A
SCHEMATIC
1
MECHANICAL OUTLINE
ø..116555
.805
.795
.290
.260
.065
.055
.150
.950 .140
.930
1 23
.665
.645
3
2
.750
.500
.200
.400 .200 ø..006555
TO-267
.160
4 11 R0
3.1 - 105
3.1







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OM6055SJ Даташит, Описание, Даташиты
OM6050SJ - OM6055SJ
3.1
ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted)
Parameter
Symbol OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM6055SJ
Unit
Drain Source Voltage
VDS
100 200
500 600 800 1000 V
Drain Gate Voltage (RGS = 1.0 M )
VDGR 100 200 500 600 800 1000 V
Continuous Drain Current @ TC = 25°C 2 ID 100 55 30 25 18 10 A
Continuous Drain Current @ TC = 100°C 2
ID
43 23
13 10
7
4A
Pulsed Drain Current1
IDM 235 135 80 75 50 30 A
Max. Power Dissipation @ TC = 25°C
PD
280
W
Max. Power Dissipation @ TC = 100°C
PD
110
W
Linear Derating Factor Junction-to-Case
2.22
W/°C
Linear Derating Factor Junction-to-Ambient
.025
W/°C
Operating and Storage Temp. Range
TJ, Tstg
Lead Temperature (1/16" from case for 10 sec.)
-55 to +150
275
°C
°C
Notes: 1. Pulse Test: Pulse Width £ 300 msec, Duty Cycle £ 2%. 2. Package Pin Limitation: 35 Amps.
THERMAL RESISTANCE (MAXIMUM) @ TA = 25 C
Junction-to-Case
RthJC
.45
Junction-to-Ambient (Free Air Operation)
RthJA
40
° C/W
° C/W
PRELIMINARY ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Test Condition
Symbol Part No.
Min.
Max. Units
Gate Threshold Voltage
Gate Source Leakage Current
Off State Drain-Source Leakage
VDS = VGS, ID = 250µA
VGS = ±20 VDC
VDS = VDSS x 0.8 TC = 25°C
VGS = 0V
TC = 125°C
VGS(th)
IGSS
IDSS
IDSS
All
All
All
All
OM6050SJ
2.0
100
4.0
±100
10
.10
V
nA
µA
mA
OM6051SJ
200
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250 µA
VDSS
OM6052SJ
OM6053SJ
500
600
V
OM6054SJ
800
OM6055SJ 1000
OM6050SJ
.014
OM6051SJ
.030
Drain-Source Breakdown Voltage
VGS = 10V, ID = ID25 x 0.5
RDS(on)
OM6052SJ
OM6053SJ
.160
.230
OM6054SJ
.500
OM6055SJ
.800
The above data is preliminary. Please contact factory for additional data
and the dynamic and switching characteristics.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246










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