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OM6107SC PDF даташит

Спецификация OM6107SC изготовлена ​​​​«Omnirel» и имеет функцию, называемую «(OM6x05SC - OM6008SC) POWER MOSFET».

Детали детали

Номер произв OM6107SC
Описание (OM6x05SC - OM6008SC) POWER MOSFET
Производители Omnirel
логотип Omnirel логотип 

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OM6107SC Даташит, Описание, Даташиты
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OM6005SC OM6007SC OM6105SC OM6107SC
OM6006SC OM6008SC OM6106SC OM6108SC
POWER MOSFET IN HERMETIC ISOLATED
JEDEC TO-258AA PACKAGE
100V Thru 500V, Up To 35 Amp, N-Channel
MOSFET With Or Without Zener Gate
Clamp Protection
FEATURES
• Isolated Hermetic Metal Package
• Bi-Lateral Zener Gate Protection (Optional)
• Fast Switching, Low Drive Current
• Ease Of Paralleling For Added Power
• Low RDS(on)
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. The MOSFET gates are protected using bi-lateral zener
clamps in the OM6105SC series.
MAXIMUM RATINGS
PART NUMBER
OM6005SC/OM6105SC
VDS
100 V
RDS(on)
.065
OM6006SC/OM6106SC
200 V
.095
OM6007SC/OM6107SC
400 V
0.3
Note:
OM6008SC/OM6108SC
500 V
OM6105SC thru OM6108SC is supplied with zener gate protection.
OM6005SC thru OM6008SC is supplied without zener gate protection.
0.4
SCHEMATIC
WITHOUT ZENER CLAMPS
OM6005SC - 6008SC
1 - DRAIN
WITH ZENER CLAMPS
OM6105SC - 6108SC
1 - DRAIN
ID
35 A
30 A
15 A
13 A
3 - GATE
3 - GATE
ZENERS
3.1
4 11 R5
Supersedes 1 07 R4
2 - SOURCE
3.1 - 75
2 - SOURCE









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OM6107SC Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM6105SC/OM6005SC (100V)
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS
VGS(th)
IGSS
IGSS
IDSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage (OM6105)
Gate-Body Leakage (OM6005)
Zero Gate Voltage Drain
Current
ID(on)
VDS(on)
On-State Drain Current1
Static Drain-Source On-State
Voltage1
100 V VGS = 0,
ID = 250 mA
2.0 4.0 V VDS = VGS, ID = 250 mA
± 500 nA VGS = ± 12.8 V
± 100 nA VGS = ± 20 V
0.1 0.25 mA VDS = Max. Rat., VGS = 0
0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
35 A VDS 2 VDS(on), VGS = 10 V
1.1 1.3 V VGS = 10 V, ID = 20 A
RDS(on) Static Drain-Source On-State
Resistance1
0.55 0.65
VGS = 10 V, ID = 20 A
RDS(on) Static Drain-Source On-State
Resistance1
.09 0.11
VGS = 10 V, ID = 20 A,
TC = 125 C
DYNAMIC
gfs Forward Transductance1
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
9.0 10
2700
1300
470
28
45
100
50
S(W )
pF
pF
pF
ns
ns
ns
ns
VDS 2 VDS(on), ID = 20 A
VGS = 0
VDS = 25 V
f = 1 MHz
VDD = 30 V, ID @ 20 A
Rg = 5.0 W , VG = 10V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS Continuous Source Current
(Body Diode)
ISM Source Current1
(Body Diode)
VSD Diode Forward Voltage1
trr Reverse Recovery Time
- 40 A
- 160 A
- 2.5 V
400 ns
Modified MOSPOWER
D
symbol showing
the integral P-N
G
Junction rectifier.
S
TC = 25 C, IS = -40 A, VGS = 0
TJ = 150 C, IF = IS,
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM6106SC/OM6006SC (200V)
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS
VGS(th)
IGSS
IGSS
IDSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage (OM6106)
Gate-Body Leakage (OM6006)
Zero Gate Voltage Drain
Current
ID(on)
VDS(on)
On-State Drain Current1
Static Drain-Source On-State
Voltage1
200 V VGS = 0,
ID = 250 mA
2.0 4.0 V VDS = VGS, ID = 250 mA
± 500 nA VGS = ± 12.8 V
± 100 nA VGS = ± 20 V
0.1 0.25 mA VDS = Max. Rat., VGS = 0
0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
30 A VDS 2 VDS(on), VGS = 10 V
1.36 1.52 V VGS = 10 V, ID = 16 A
RDS(on) Static Drain-Source On-State
Resistance1
.085 .095
VGS = 10 V, ID = 16 A
RDS(on) Static Drain-Source On-State
Resistance1
0.14 0.17
VGS = 10 V, ID = 16 A,
TC = 125 C
DYNAMIC
gfs Forward Transductance1
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
10.0 12.5
2400
600
250
25
60
85
38
S(W )
pF
pF
pF
ns
ns
ns
ns
VDS 2 VDS(on), ID = 16 A
VGS = 0
VDS = 25 V
f = 1 MHz
VDD = 75 V, ID @ 16 A
Rg = 5.0 W ,VGS = 10V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS Continuous Source Current
(Body Diode)
ISM Source Current1
(Body Diode)
VSD Diode Forward Voltage1
trr Reverse Recovery Time
- 30 A
- 120 A
-2 V
350 ns
Modified MOSPOWER
D
symbol showing
the integral P-N
G
Junction rectifier.
S
TC = 25 C, IS = -30 A, VGS = 0
TJ = 150 C, IF = IS,
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.









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OM6107SC Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM6107SC/OM6007SC (400V)
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS
VGS(th)
IGSS
IGSS
IDSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage (OM6107)
Gate-Body Leakage (OM6007)
Zero Gate Voltage Drain
Current
ID(on)
VDS(on)
On-State Drain Current1
Static Drain-Source On-State
Voltage1
400 V VGS = 0,
ID = 250 mA
2.0 4.0 V VDS = VGS, ID = 250 mA
± 500 nA VGS = ± 12.8 V
± 100 nA VGS = ± 20 V
0.1 0.25 mA VDS = Max. Rat., VGS = 0
0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
15 A VDS 2 VDS(on), VGS = 10 V
2.0 2.4 V VGS = 10 V, ID = 8.0 A
RDS(on) Static Drain-Source On-State
Resistance1
0.25 0.3
VGS = 10 V, ID = 8.0 A
RDS(on) Static Drain-Source On-State
Resistance1
0.50 0.60
VGS = 10 V, ID = 8.0 A,
TC = 125 C
DYNAMIC
gfs Forward Transductance1
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
6.0 9.6
2900
450
150
30
40
80
30
S(W )
pF
pF
pF
ns
ns
ns
ns
VDS 2 VDS(on), ID = 8.0 A
VGS = 0
VDS = 25 V
f = 1 MHz
VDD = 200 V, ID @ 8.0 A
Rg =5.0 W , VGS =10V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS Continuous Source Current
(Body Diode)
ISM Source Current1
(Body Diode)
VSD Diode Forward Voltage1
trr Reverse Recovery Time
Modified MOSPOWER
- 15 A
symbol showing
D
the integral P-N G
- 60 A
Junction rectifier.
S
- 1.6 V TC = 25 C, IS = -15 A, VGS = 0
600 ns TJ = 100 C, IF = IS,
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM6108SC/OM6008SC (500V)
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS
VGS(th)
IGSS
IGSS
IDSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage (OM6108)
Gate-Body Leakage (OM6008)
Zero Gate Voltage Drain
Current
ID(on)
VDS(on)
On-State Drain Current1
Static Drain-Source On-State
Voltage1
500 V VGS = 0,
ID = 250 mA
2.0 4.0 V VDS = VGS, ID = 250 mA
± 500 nA VGS = ± 12.8 V
± 100 nA VGS = ± 20 V
0.1 0.25 mA VDS = Max. Rat., VGS = 0
0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
13 A VDS 2 VDS(on), VGS = 10 V
2.1 2.8 V VGS = 10 V, ID = 7.0 A
RDS(on) Static Drain-Source On-State
Resistance1
0.3 0.4
VGS = 10 V, ID = 7.0 A
RDS(on) Static Drain-Source On-State
Resistance1
0.66 0.88
VGS = 10 V, ID = 7.0 A,
TC = 125 C
DYNAMIC
gfs Forward Transductance1
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
5.0 7.2
2600
280
40
30
46
75
31
S(W )
pF
pF
pF
ns
ns
ns
ns
VDS 2 VDS(on), ID = 7.0 A
VGS = 0
VDS = 25 V
f = 1 MHz
VDD = 210 V, ID @ 7.0 A
Rg = 5.0 W , VGS = 10 V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS Continuous Source Current
(Body Diode)
ISM Source Current1
(Body Diode)
VSD Diode Forward Voltage1
trr Reverse Recovery Time
Modified MOSPOWER
- 13 A
symbol showing
D
the integral P-N G
- 52 A
Junction rectifier.
S
- 1.4 V TC = 25 C, IS = -13 A, VGS = 0
700 ns TJ = 150 C, IF = IS,
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.










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