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PDF HY62UF16806A Data sheet ( Hoja de datos )

Número de pieza HY62UF16806A
Descripción 512Kx16bit full CMOS SRAM
Fabricantes Hynix Semiconductor 
Logotipo Hynix Semiconductor Logotipo



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No Preview Available ! HY62UF16806A Hoja de datos, Descripción, Manual

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HY62UF16806A Series
512Kx16bit full CMOS SRAM
Document Title
512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM
Revision History
Revision No History
00 Initial Draft
Draft Date
Remark
Feb.21.2001 Preliminary
01 Change Logo
- Hyundai à Hynix
Apr.28.2001
02 Change DC Parameter
Jan.28.2002
- Isb1(LL) : 40uA à 25uA
- Isb1(Typ) : 8uA à 1uA
- Icc : 5mA à 4mA
- Icc1(1us) : 8mA à 4mA
- Icc1(Min) : 50mA à 40mA
Change Data Retention
- IccDR(LL) : 25uA à 15uA
Change AC Parameter
- tOE
: 35ns à 25ns@55ns
: 40ns à 35ns@70ns
- tCW
: 50ns à 45ns@55ns
- tAW
: 50ns à 45ns@55ns
- tBW
: 50ns à 45ns@55ns
- tWP
: 45ns à 45ns@55ns
- tCHZ
- tOHZ
- tBHZ
: 30ns à 20ns@55ns , 30ns à 25ns@70ns
: 30ns à 20ns@55ns , 30ns à 25ns@70ns
: 30ns à 20ns@55ns , 30ns à 25ns@70ns
03 Change DC Parameter
- Icc1(Min) : 40mA à 35mA
Mar.15.2002
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.03 /Mar. 2002
Hynix Semiconductor

1 page




HY62UF16806A pdf
HY62UF16806A
AC CHARACTERISTICS
Vcc = 2.7V~3.3V, TA = 0°C to 70°C/ -40°C to 85°C unless otherwise specified
# Symbol Parameter
-55 -70
Min. Max. Min. Max.
READ CYCLE
1 tRC
Read Cycle Time
55 - 70 -
2 tAA
Address Access Time
- 55 - 70
3 tACS
Chip Select Access Time
- 55 - 70
4 tOE
Output Enable to Output Valid
- 25 - 35
5 tBA
/LB, /UB Access Time
- 55 - 70
6 tCLZ
Chip Select to Output in Low Z
10 - 10 -
7 tOLZ
Output Enable to Output in Low Z
5-5-
8 tBLZ
/LB, /UB Enable to Output in Low Z
10
-
10
-
9 tCHZ
Chip Deselection to Output in High Z
0
20
0
25
10 tOHZ Out Disable to Output in High Z
0 20 0 25
11 tBHZ /LB, /UB Disable to Output in High Z 0 20 0 25
12 tOH
Output Hold from Address Change
10 - 10 -
WRITE CYCLE
13 tWC
Write Cycle Time
55 - 70 -
14 tCW
Chip Selection to End of Write
45 - 60 -
15 tAW
Address Valid to End of Write
45 - 60 -
16 tBW
/LB, /UB Valid to End of Write
45 - 60 -
17 tAS
Address Set-up Time
0-0-
18 tWP
Write Pulse Width
40 - 50 -
19 tWR
Write Recovery Time
0-0-
20 tWHZ Write to Output in High Z
0 20 0 25
21 tDW
Data to Write Time Overlap
25 - 30 -
22 tDH
Data Hold from Write Time
0-0-
23 tOW
Output Active from End of Write
5-5-
-85
Min Max.
85 -
- 85
- 85
- 45
- 85
10 -
5-
10 -
0 30
0 30
0 30
10 -
85 -
70 -
70 -
70 -
0-
55 -
0-
0 30
35 -
0-
5-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC TEST CONDITIONS
TA = 0°C to 70°C / -40°C to 85°C, unless otherwise specified
PARAMETER
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
Output Load
tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW
Other
Value
0.4V to 2.2V
5ns
1.5V
CL = 5pF + 1TTL Load
CL = 30pF + 1TTL Load
AC TEST LOADS
VTM = 2.8V
D
OUT
1029 Ohm
CL(1)
1728 Ohm
Note
1. Including jig and scope capacitance
Rev.03/Mar. 2002
4

5 Page





HY62UF16806A arduino
MARKING INSTRUCTION
Package
Marking Example
HY62UF16806A
uBGA
H YU F 6 8 0 6 A
css t
y wwp
x xxxx
KOR
l HYUF6806A
lc
l ss
lt
ly
l ww
lp
l xxxxx
l KOR
Note
- Capital Letter
- Small Letter
Index
: Part Name
: Power Consumption
-D
-S
: Low Low Power
: Super Low Power
: Speed
- 55
- 70
- 85
: 55ns
: 70ns
: 85ns
: Temperature
-C
-I
: Commercial ( -0 ~ 70 C )
: Industrial ( -40 ~ 85 C )
: Year (ex : 0 = year 2000, 1= year2001)
: Work Week ( ex : 12 = work week 12)
: Process Code
: Lot No.
: Origin Country
: Fixed Item
: Non-fixed Item
Rev.03/Mar. 2002
10

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