Datasheet MRFG35010 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	MRFG35010	Gallium Arsenide PHEMT RF Power Field Effect Transistor Freescale Semiconductor Technical Data MRFG35010 Rev. 6, 12/2004 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or Class A l	Freescale Semiconductor	transistor
2	MRFG35010ANT1	Gallium Arsenide PHEMT Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 0, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in	Freescale Semiconductor	data
3	MRFG35010AR1	Gallium Arsenide PHEMT RF Power Field Effect Transistor Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 1, 6/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable	Freescale Semiconductor	transistor
4	MRFG35010MT1	Gallium Arsenide PHEMT MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRFG35010MT1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Dev	Motorola Semiconductors	data

MRF Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	MRF	Fast Acting Radial Lead Micro Fuse Series Type MRF MRFD0106 EMRFD1005A1 RoHS Compliant Fast Acting Radial Lead Micro Fuse Series Catalog Number Ampere Rating Typical Volt-drop Melting I2T Cold @100% In < 10 mSec Resistance (ohm) (Volt) max. (A2 Sec) Melting I2T @10 In (A2 Sec) Maximum Power Dissipation (W) MRF 50 MRF 63 MRF 80 MRF 100 MR	Bel Fuse	data
2	MRF-261	High Band VHF FM Power Transistor ELEFLOW www.eleflow.com TECHNOLOGIES MRF261 High band/VHF FM power transistor MRF261 Description: MRF261 is designed as 10W, 5.2dB, 12.5V, 136-175MHz, TO220 high band/VHF FM transistors. Maximum Ratings at TU = 25 Symbol BVCES BVCEO BVEBO IC Ptot TSTG TjM Data at TU = 25 Sy	Eleflow	transistor
3	MRF10005	The RF Line Microwave Power Transistor SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10005/D The RF Line Microwave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performanc	Tyco	transistor
4	MRF10005	MICROWAVE POWER TRANSISTOR MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10005/D Microwave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed P	Motorola Semiconductors	transistor
5	MRF1000MB	MICROWAVE POWER TRANSISTORS NPN SILICON SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1000MB/D The RF Line Microwave Pulse Power Transistors Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. • Guaranteed Performance @ 1090 MHz,	Tyco	transistor
6	MRF1001A	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF1001A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA, G U max 2 = 11.5 dB (typ) @ 300 MHz,	Microsemi	transistor
7	MRF1002	MICROWAVE POWER TRANSISTOR MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1002MA/D Microwave Pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc	Motorola Semiconductors	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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