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PDF MRFG35003MT1 Data sheet ( Hoja de datos )
| Número de pieza | MRFG35003MT1 | |
| Descripción | The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRFG35003MT1/D
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.
• Typical W–CDMA Performance: –42 dBc ACPR, 3.55 GHz, 12 Volts,
IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 300 mWatt
Power Gain — 11.5 dB
Efficiency — 25%
• 3 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35003MT1
3.5 GHz, 3 W, 12 V
POWER FET
GaAs PHEMT
CASE 466–02, STYLE 1
PLD–1.5
PLASTIC
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Gate–Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature(1)
Operating Case Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22–A113
Class AB
Symbol
VDSS
PD
VGS
Pin
Tstg
Tch
TC
Symbol
RθJC
(1) For reliable operation, the operating channel temperature should not exceed 150°C.
(2) Simulated.
Value
15
8.1(2)
0.05(2)
–5
29
– 65 to +150
175
– 20 to +85
Max
18.5(2)
Rating
1
Unit
Vdc
Watts
W/°C
Vdc
dBm
°C
°C
°C
Unit
°C/W
REV 0
MMoOtoTroOla,RInOc.L2A00R3 F DEVICE DATA For More Information On This Product,
Go to: www.freescale.com
MRFG35003MT1
1
1 page  
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
00
-10 IRL -10
-20
VDS = 12 Vdc, IDQ = 50 mA
f = 3.55 GHz, 8.5 P/A 3GPP W-CDMA
-30 ΓS = 0.813é-106.27_, ΓL = 0.734é-142.65_
-40
ACPR
-50
-20
-30
-40
-50
-60
0.01
0.1
Pout, OUTPUT POWER (WATTS)
Figure 3. W–CDMA ACPR and Input Return
Loss versus Output Power
-60
1
18
VDS = 12 Vdc, IDQ = 50 mA
16 f = 3.55 GHz, 8.5 P/A 3GPP W-CDMA
ΓS = 0.813é-106.27_, ΓL = 0.734é-142.65_
14
12
45
40
PAE
35
GT 30
10 25
8 20
6 15
4 10
2
0.01
0.1
5
1
Pout, OUTPUT POWER (WATTS)
Figure 4. Transducer Gain and Power Added
Efficiency versus Output Power
NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
MOTOROLA RF DEVICE DATA For More Information On This Product,
Go to: www.freescale.com
MRFG35003MT1
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRFG35003MT1.PDF ] | |
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