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MRFG35003M6T1 PDF даташит

Спецификация MRFG35003M6T1 изготовлена ​​​​«Motorola Semiconductors» и имеет функцию, называемую «GALLIUM ARSENIDE PHEMT».

Детали детали

Номер произв MRFG35003M6T1
Описание GALLIUM ARSENIDE PHEMT
Производители Motorola Semiconductors
логотип Motorola Semiconductors логотип 

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MRFG35003M6T1 Даташит, Описание, Даташиты
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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRFG35003M6T1/D
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Character-
ized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in
Class AB Customer Premise Equipment (CPE) applications.
Typical W–CDMA Performance: –42 dBc ACPR, 3.55 GHz, 6 Volts,
IDQ = 180 mA
Output Power — 450 mWatts
Power Gain — 9 dB
Efficiency — 24%
3 Watts P1dB @ 3.55 GHz
Excellent Phase Linearity and Group Delay Characteristics
High Gain, High Efficiency and High Linearity
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35003M6T1
3.5 GHz, 3 W, 6 V
POWER FET
GaAs PHEMT
CASE 466–02, STYLE 1
PLD–1.5
PLASTIC
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Gate–Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature(1)
Operating Case Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22–A113
Symbol
VDSS
PD
VGS
Pin
Tstg
Tch
TC
Symbol
RθJC
(1) For reliable operation, the operating channel temperature should not exceed 150°C.
(2) Simulated.
Value
8
22.7(2)
0.15(2)
–5
24
– 65 to +150
175
– 20 to +85
Max
6.6(2)
Rating
1
Unit
Vdc
Watts
W/°C
Vdc
dBm
°C
°C
°C
Unit
°C/W
REV 1
MMoOtoTroOla,RInOc.L2A00R3 F DEVICE DATA For More Information On This Product,
Go to: www.freescale.com
MRFG35003M6T1
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MRFG35003M6T1 Даташит, Описание, Даташиты
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Saturated Drain Current
(VDS = 3.5 Vdc, VGS = 0 Vdc)
IDSS
Off State Leakage Current
(VGS = –0.4 Vdc, VDS = 0 Vdc)
IGSS
Off State Drain Current
(VDS = 6 Vdc, VGS = –1.9 Vdc)
IDSO
Off State Current
(VDS = 20 Vdc, VGS = –2.5 Vdc)
IDSX
Gate–Source Cut–off Voltage
(VDS = 3.5 Vdc, IDS = 15 mA)
VGS(th)
Quiescent Gate Voltage
(VDS = 6 Vdc, IDQ = 180 mA)
VGS(Q)
Power Gain
(VDD = 6 Vdc, IDQ = 180 mA, f = 3.55 GHz)
Gps
Output Power, 1 dB Compression Point
(VDD = 6 Vdc, IDQ = 180 mA, f = 3.55 GHz)
P1dB
Drain Efficiency
(VDD = 6 Vdc, IDQ = 180 mA, Pout = 450 mW, f = 3.55 GHz.
Tune for Maximum Pout)
hD
Adjacent Channel Power Ratio
(VDD = 6 Vdc, Pout = 450 mW Avg., IDQ = 180 mA,
f = 3.55 GHz, W–CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)
ACPR
Min
–1.2
–1.1
8
22
Typ
2.9
< 1.0
0.02
1.0
–1.0
–0.9
9
3
24
–42
Max Unit
— Adc
100 µAdc
1.0 mAdc
15 mAdc
–0.7 Vdc
–0.7 Vdc
— dB
—W
—%
–38 dBc
MRFG35003M6T1
2
For More Information On This Product,MOTOROLA RF DEVICE DATA
Go to: www.freescale.com









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MRFG35003M6T1 Даташит, Описание, Даташиты
Freescale Semiconductor, Inc.
VGS VDD=6.0
C11 C10 C9 C8 C7 C6 C5
R1
C3 C4
C16 C17 C18 C19 C20 C21 C22
C14 C15
RF
INPUT
Z1
Z2
C1
Z5
C2
Z3 Z4
C12
Z6 Z7
C28 C27
Z10
C13
Z8 Z9
C23
Z11 Z12 Z13
RF
OUTPUT
Z14
C24
C26 C25
Z1, Z14
Z2
Z3
Z4
Z5, Z10
Z6
Z7
0.044x 0.125Microstrip
0.440x 0.105Microstrip
0.340x 0.357Microstrip
0.380x 0.426Microstrip
0.527x 0.015Microstrip
0.027x 0.347Microstrip
0.538x 0.115Microstrip
Z8
Z9
Z11
Z12
Z13
PCB
0.439x 0.136Microstrip
0.062x 0.280Microstrip
0.349x 0.302Microstrip
0.055x 0.130Microstrip
0.044x 0.502Microstrip
Rogers 4350, 0.020, εr = 3.50
Figure 1. 3.5 GHz Test Circuit Schematic
Table 1. 3.5 GHz Test Circuit Component Designations and Values
Designation
C1
C2
C3, C4, C14, C15
C5, C16
C6, C17
C7, C18
C8, C19
C9, C20
C10, C21
C11, C22
C12, C13, C26, C27
C23, C25, C28
C24
R1
Description
12 pF Chip Capacitor, B Case, ATC
0.1 pF Chip Capacitor (0805), AVX
3.9 pF Chip Capacitors (0805), AVX
10 pF Chip Capacitors, A Case, ATC
100 pF Chip Capacitors, A Case, ATC
100 pF Chip Capacitors, B Case, ATC
1000 pF Chip Capacitors, B Case, ATC
3.9 µF Chip Capacitors, B Case, ATC
0.1 µF Chip Capacitors, B Case, ATC
22 µF, 35 V Tantalum Surface Mount Capacitor, Newark
0.3 pF Chip Capacitors (0805), AVX
1.0 pF Chip Capacitors (0805), AVX
7.5 pF Chip Capacitor, B Case, ATC
50 W Chip Resistor, Newark
MOTOROLA RF DEVICE DATA For More Information On This Product,
Go to: www.freescale.com
MRFG35003M6T1
3










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MRFG35003M6T1GALLIUM ARSENIDE PHEMTMotorola Semiconductors
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