5LN02N PDF даташит
Спецификация 5LN02N изготовлена «Sanyo Semicon Device» и имеет функцию, называемую «Ultrahigh-Speed Switching Applications». |
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Детали детали
Номер произв | 5LN02N |
Описание | Ultrahigh-Speed Switching Applications |
Производители | Sanyo Semicon Device |
логотип |
4 Pages
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Ordering number:ENN6538
N-Channel Silicon MOSFET
5LN02N
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Package Dimensions
unit:mm
2178
[5LN02N]
5.0
4.0
4.0
0.45
0.5
0.45 0.44
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : YE
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
ID=1mA, VGS=0
VDS=50V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=100µA
VDS=10V, ID=100mA
ID=100mA, VGS=4V
ID=50mA, VGS=2.5V
ID=10mA, VGS=1.5V
123
1.3 1.3
1 : Source
2 : Drain
3 : Gate
SANYO : NP
Ratings
50
±10
0.2
0.8
0.4
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
50 V
10 µA
±10 µA
0.4 1.3 V
0.34 0.49
S
1.9 2.4 Ω
2.2 3 Ω
3.2 6.4 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2000TS (KOTO) TA-2940 No.6538-1/4
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5LN02N
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Symbol
Conditions
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=200mA
VDS=10V, VGS=10V, ID=200mA
VDS=10V, VGS=10V, ID=200mA
IS=200mA, VGS=0
Switching Time Test Circuit
4V VIN
0V
VIN
PW=10µs
D.C.≤1%
VDD=25V
ID=100mA
RL=250Ω
D VOUT
G
5LN02N
P.G 50Ω S
Ratings
min typ max
Unit
25 pF
12 pF
4.5 pF
25 ns
75 ns
350 ns
170 ns
2.18
nC
0.28
nC
0.45
nC
0.83
1.2 V
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0
6
3.5V
4.0V
ID -- VDS
3.0V
2.5V
VGS=1.5V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS – V IT00274
RDS(on) -- VGS
Ta=25°C
5
50mA
4
ID=100mA
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage, VGS – V IT00276
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0
10
7
5
ID -- VGS
VDS=10V
0.5 1.0 1.5 2.0
Gate-to-Source Voltage, VGS – V
RDS(on) -- ID
2.5
IT00275
VGS=4V
3
2
1.0
0.01
Ta=75°C
25°C
--25°C
23
5 7 0.1
23
5
Drain Current, ID – A
IT00277
No.6538-2/4
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5LN02N
RDS(on) -- ID
RDS(on) -- ID
10 10
VGS=2.5V
VGS=1.5V
77
5
3 Ta=75°C
25°C
2
--25°C
5
Ta=75°C
25°C
3
--25°C
2
1.0
0.01
4.5
23
5 7 0.1
23
5
Drain Current, ID – A
IT00278
RDS(on) -- Ta
4.0
3.5
3.0
2.5
2.0
I D=I5D0=m1A00, mVAG,SV=2G.5SV=4.0V
1.5
1.0
0.5
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C
IT00280
IF -- VSD
1.0
7 VGS = 0
5
3
2
0.1
7
5
3
2
0.01
0
100
7
5
3
2
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Diode Forward Voltage, VSD – V IT00282
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
10 Coss
7
5
3 Crss
2
1.0
0 5 10 15 20 25 30 35 40 45 50
Drain-to-Source Voltage, VDS – V IT00284
1.0
0.001
2
1.0
VDS=10V
7
3 5 7 0.01
Drain Current, ID – A
yfs -- ID
2
5
Ta= --25°C
25°C
3 75°C
35
IT00279
2
0.1
0.01
1000
7
5
3
2
100
7
5
3
2
23
5 7 0.1
23
Drain Current, ID – A
SW Time -- ID
5 7 1.0
IT00281
VDD=25V
VGS=4V
td(off)
tf
tr
td(on)
10
0.01
2
10
VDS=10V
9 ID=200mA
8
3 5 7 0.1
Drain Current, ID – A
VGS -- Qg
23
IT00283
7
6
5
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5
Total Gate Charge, Qg – nC
IT00285
No.6538-3/4
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