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PDF MRF6S9125NR1 Data sheet ( Hoja de datos )
| Número de pieza | MRF6S9125NR1 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
N - CDMA Application
•
Typical Single -
950 mA, Pout =
C2a7rWriearttNA-vCgD.,MFAullPFerrefoqrumeannccyeB: aVnDdD(=86258-V8o9l5tsM, IHDzQ),=IS
-
95
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = - 47.1 dBc @ 30 kHz Bandwidth
GSM EDGE Application
• TP92yopu1ti-c=9a6l60G0 MSWMHaztEt)sDAGvEg.P, Feurflol rFmreaqnuceen: cVyDDBa=n2d8(8V6o5lt-s8, 9ID5QM=H7z0o0rmA,
Power Gain — 20 dB
Drain Efficiency — 40% (Typ)
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
• 1T2yp5icWaal GttsS, MFuPlleFrfroerqmuaennccey:BVaDnDd=(92281V- 9o6lt0s,MIDHQz=) 700 mA, Pout =
Power Gain — 19 dB
Drain Efficiency — 62%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, @ P1dB Output Power,
@ f = 880 MHz
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S9125
Rev. 1, 7/2005
MRF6S9125NR1
MRF6S9125NBR1
MRF6S9125MR1
MRF6S9125MBR1
880 MHz, 27 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S9125NR1(MR1)
CASE 1484 - 02, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S9125NBR1(MBR1)
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGS
PD
Tstg
TJ
Value
- 0.5, +68
- 0.5, +12
398
2.3
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
1
1 page  
C9
VGG
C10
C1
C8 C7
C20 C21
C22
C6
R2
R1 C4
L1
C2
C5
C3
C19
C11
L2
C18
C14
VDD
C23
C17
C13 C15
C16
C12
900 MHz
TO272 WB
Rev. 0
Figure 2. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
5
5 Page 
NOTES
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet MRF6S9125NR1.PDF ] | |
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