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MRF6S9125MR1 PDF даташит

Спецификация MRF6S9125MR1 изготовлена ​​​​«Freescale Semiconductor» и имеет функцию, называемую «RF Power Field Effect Transistors».

Детали детали

Номер произв MRF6S9125MR1
Описание RF Power Field Effect Transistors
Производители Freescale Semiconductor
логотип Freescale Semiconductor логотип 

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MRF6S9125MR1 Даташит, Описание, Даташиты
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
N - CDMA Application
Typical Single -
950 mA, Pout =
C2a7rWriearttNA-vCgD.,MFAullPFerrefoqrumeannccyeB: aVnDdD(=86258-V8o9l5tsM, IHDzQ),=IS
-
95
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = - 47.1 dBc @ 30 kHz Bandwidth
GSM EDGE Application
TP92yopu1ti-c=9a6l60G0 MSWMHaztEt)sDAGvEg.P, Feurflol rFmreaqnuceen: cVyDDBa=n2d8(8V6o5lt-s8, 9ID5QM=H7z0o0rmA,
Power Gain — 20 dB
Drain Efficiency — 40% (Typ)
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
1T2yp5icWaal GttsS, MFuPlleFrfroerqmuaennccey:BVaDnDd=(92281V- 9o6lt0s,MIDHQz=) 700 mA, Pout =
Power Gain — 19 dB
Drain Efficiency — 62%
Capable of Handling 10:1 VSWR, @ 28 Vdc, @ P1dB Output Power,
@ f = 880 MHz
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
N Suffix Indicates Lead - Free Terminations
200°C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S9125
Rev. 1, 7/2005
MRF6S9125NR1
MRF6S9125NBR1
MRF6S9125MR1
MRF6S9125MBR1
880 MHz, 27 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S9125NR1(MR1)
CASE 1484 - 02, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S9125NBR1(MBR1)
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGS
PD
Tstg
TJ
Value
- 0.5, +68
- 0.5, +12
398
2.3
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
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MRF6S9125MR1 Даташит, Описание, Даташиты
Table 2. Thermal Characteristics
Characteristic
Symbol
Value(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 76°C, 27 W CW
RθJC
0.44
0.45
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
C (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10 µAdc
IDSS
1 µAdc
IGSS
1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 µAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 950 mAdc)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.74 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 8 Adc)
Dynamic Characteristics (3)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VGS(th)
1
2.1
3 Vdc
VGS(Q)
2
2.89
4
Vdc
VDS(on)
0.05
0.23
0.3
Vdc
gfs — 6 — S
Coss
60
pF
Crss
2
— pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W, f = 880 MHz
Power Gain
Gps 19 20.2
Drain Efficiency
ηD 29 31
Adjacent Channel Power Ratio
ACPR — - 47.1
24
- 45
dB
%
dBc
Input Return Loss
IRL — - 16 - 9 dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part is internally input matched.
(continued)
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
2
RF Device Data
Freescale Semiconductor









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MRF6S9125MR1 Даташит, Описание, Даташиты
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 950 mA,
Pout = 60 W Avg., 921 MHz<Frequency<960 MHz
Power Gain
Gps — 20 —
Drain Efficiency
ηD — 40 —
Error Vector Magnitude
EVM
1.5
Spectral Regrowth at 400 kHz Offset
SR1 — - 63 —
Spectral Regrowth at 600 kHz Offset
SR2 — - 78 —
Typical CW Performances (In Freescale GSM Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 125 W,
921 MHz<Frequency<960 MHz
Power Gain
Gps — 19 —
Drain Efficiency
ηD — 62 —
Input Return Loss
IRL — - 12 —
Pout @ 1 dB Compression Point, CW
(f = 880 MHz)
P1dB
125
Unit
dB
%
% rms
dBc
dBc
dB
%
dB
W
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
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Номер в каталогеОписаниеПроизводители
MRF6S9125MR1RF Power Field Effect TransistorsFreescale Semiconductor
Freescale Semiconductor

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