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PDF MRF6S19060NBR1 Data sheet ( Hoja de datos )
| Número de pieza | MRF6S19060NBR1 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
(ITDPyQiploi=ct,a6Sl12y0n- Ccm,aAPr,raiPegroinuNgt -=, CT1Dr2aMfWfiAcaCPttseordAfeovsrgm.8,aFTnuhclrelo:FuVrgeDhqDu1=e3n)2cC8yhVBaonaltnnsed,l,
IS - 95 CDMA
Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 26%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 60 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S19060N
Rev. 3, 5/2006
MRF6S19060NR1
MRF6S19060NBR1
1930- 1990 MHz, 12 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S19060NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S19060NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TJ
- 0.5, +68
- 0.5, +12
- 65 to +175
200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 81°C, 60 W CW
Case Temperature 79°C, 12 W CW
RθJC
0.84
1.0
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S19060NR1 MRF6S19060NBR1
1
1 page  
TYPICAL CHARACTERISTICS
16.6
16.5 ηD
16.4
Gps
27
26.5
26
16.3
16.2
16.1 IRL
16
IM3
15.9
VDD = 28 Vdc, Pout = 12 W (Avg.)
IDQ = 610 mA, 2−Carrier N−CDMA
2.5 MHz Carrier Spacing, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
25.5
25
−30 −10
−36 −14
−42 −18
15.8 −48 −22
15.7 ACPR
− 54
− 60
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
− 26
− 30
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 12 Watts Avg.
16.2 38.5
Gps
16.1 ηD
38
16 37.5
15.9
15.8
15.7
15.6
15.5 IM3
IRL
VDD = 28 Vdc, Pout = 24 W (Avg.)
IDQ = 610 mA, 2−Carrier N−CDMA
2.5 MHz Carrier Spacing, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
37
36.5
−20 −10
−25 −14
−30 −18
15.4 −35 −22
15.3 ACPR
−40 −26
15.2 −45
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
− 30
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 24 Watts Avg.
18
17 763 mA
610 mA
16
458 mA
15
14 305 mA
IDQ = 915 mA
13 VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
12
1 10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
200
− 10
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
− 20
− 30
915 mA
IDQ = 305 mA
− 40
−50 458 mA
763 mA
610 mA
− 60
1
10 100 200
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S19060NR1 MRF6S19060NBR1
5
5 Page 
NOTES
RF Device Data
Freescale Semiconductor
MRF6S19060NR1 MRF6S19060NBR1
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet MRF6S19060NBR1.PDF ] | |
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