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PDF TPCA8010-H Data sheet ( Hoja de datos )
| Número de pieza | TPCA8010-H | |
| Descripción | High Speed and High Efficiency DC-DC Converters | |
| Fabricantes | Toshiba Semiconductor | |
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TPCA8010-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type( -MOSV)
TPCA8010-H TENTATIVE
High Speed and High Efficiency DC-DC Converters
• Small footprint due to small and thin package
• High speed switching
• Small gate charge: Qg = 10nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 380mO (typ.)
• High forward transfer admittance: |Yfs| = S (typ.)
• Low leakage current: IDSS = 100 µA (max) (VDS = 100 V)
• Enhancement mode: V th = 2 to 4V (V DS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25 )
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25 ) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
ID P
PD
PD
PD
EA S
IAR
EAR
Tc h
Tstg
200
200
±20
5.5
11
15
2.8
1.6
19
5.5
1.5
150
−55~150
V
V
V
A
W
W
W
mJ
A
mJ
°C
°C
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
0.5±0.1 1.27 0.4±0.1
85
0.05 M A
0.15±0.05
0.95±0.05
14
5.0±0.2
0.595
A
0.166±0.05
S 0.05 S
1 4 1.1±0.2
4.25±0.2
8 5 0.8±0.1
1,2,3 SOURCE 4 GATE
5,6,7,8 DRAIN
JEDEC
?
JEITA
?
TOSHIBA
?
Weight: 0.08 g (typ.)
Circuit Configuration
8765
1234
1 2004-3-2
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TPCA8010-H.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TPCA8010-H | High Speed and High Efficiency DC-DC Converters | Toshiba Semiconductor |
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