PDF STK16C68 Data sheet ( Hoja de datos )

Número de pieza	STK16C68
Descripción	CMOS Nonvolatile Static RAM
Fabricantes	Simtek
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No Preview Available ! www.DataSheet4U.com STK16C68 8K x 8 AutoStorePlus™ nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate • Nonvolatile Storage without Battery Problems • Directly Replaces 8K x 8 Static RAM, Battery- Backed RAM or EEPROM • 20ns, 25ns, 35ns and 45ns Access Times • STORE to EEPROM Initiated by Software or AutoStorePlus™ on Power Down • RECALL to SRAM Initiated by Software or Power Restore • 10mA Typical ICC at 200ns Cycle Time • Unlimited READ, WRITE and RECALL Cycles • 1,000,000 STORE Cycles to EEPROM • 100-Year Data Retention over Full Industrial Temperature Range • No Data Loss from Undershoot • Commercial and Industrial Temperatures • 28-Pin 600 mil PDIP and 350 mil SOIC Packages DESCRIPTION The STK16C68 is a fast SRAM with a nonvolatile EEPROM element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation) can take place automatically on power down. An internal capacitor guarantees the STORE operation regardless of power- down slew rate. Transfers from the EEPROM to the SRAM (the RECALL operation) take place automatically on restoration of power. Initiation of STORE and RECALL cycles can also be controlled by entering con- trol sequences on the SRAM inputs. The STK16C68 is pin-compatible with 8k x 8 SRAMs and battery-backed SRAMs, allowing direct substitution while enhancing performance. The STK12C68, which uses an external capacitor, and the STK15C68, which uses charge stored in system capacitance, are alternatives for sys- tems needing AutoStore™ operation. BLOCK DIAGRAM A5 A6 A7 A8 A9 A11 A12 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 EEPROM ARRAY 128 x 512 STATIC RAM ARRAY 128 x 512 STORE RECALL COLUMN I/O COLUMN DEC A0 A1 A2 A3 A4 A10 STORE/ RECALL CONTROL VCC POWER CONTROL INTERNAL CAPACITOR SOFTWARE DETECT A0 - A12 G E W PIN CONFIGURATIONS NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 VCC 27 W 26 NC 25 A8 24 A9 23 A11 22 G 21 A10 20 E 19 DQ7 18 DQ6 17 DQ5 16 DQ4 15 DQ3 PIN NAMES 28 - 600 PDIP 28 - 350 SOIC* *see order info A0 - A12 W DQ0 - DQ7 E G VCC VSS Address Inputs Write Enable Data In/Out Chip Enable Output Enable Power (+ 5V) Ground July 1999 4-73 1 page AutoStorePlus™/POWER-UP RECALL SYMBOLS NO. Standard PARAMETER 22 tRESTORE 23 tFB 24 VSWITCH 25 VRESET Power-up RECALL Duration Maximum VCC Slew Time to Ground Low Voltage Trigger Level Low Voltage Reset Level Note l: tRESTORE starts from the time VCC rises above VSWITCH. AutoStorePlus™/POWER-UP RECALL VCC 5V 24 VSWITCH 25 VRESET AutoStore™ OWER-UP RECALL W 22 tRESTORE DQ (DATA OUT) STK16C68 (VCC = 5.0V ± 10%)b STK16C68 MIN MAX 550 500 UNITS NOTES µs l ns f, h 4.0 4.5 V 3.9 V f 23 tFB POWER-UP BROWN OUT RECALL NO STORE DUE TO NO SRAM WRITES NO RECALL (VCC DID NOT GO BELOW VRESET) BROWN OUT AutoStorePlus™ NO RECALL (VCC DID NOT GO BELOW VRESET) BROWN OUT AutoStorePlus™ RECALL WHEN VCC RETURNS ABOVE VSWITCH July 1999 4-77 5 Page

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