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IRIS-G6623 PDF даташит

Спецификация IRIS-G6623 изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «INTEGRATED SWITCHER».

Детали детали

Номер произв IRIS-G6623
Описание INTEGRATED SWITCHER
Производители International Rectifier
логотип International Rectifier логотип 

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IRIS-G6623 Даташит, Описание, Даташиты
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Data Sheet No. PD 96947A
IRIS-G6623
Features
Oscillator is provided on the monolithic control with adopting On-Chip-
Trimming technology.
Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
INTEGRATED SWITCHER
Package Outline
Low start-up circuit current (100uA max)
Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
Avalanche energy guaranteed MOSFET with high VDSS
The built-in power MOSFET simplifies the surge absorption circuit
since the MOSFET guarantees the avalanche energy.
No VDSS de-rating is required.
Built-in constant voltage drive circuit
Built-in soft drive circuit
Built-in low frequency PRC mode (20kHz)
Various kinds of protection functions
Pulse-by-pulse Overcurrent Protection (OCP)
Overvoltage Protection with latch mode (OVP)
Thermal Shutdown with latch mode (TSD)
Descriptions
TO-220 Fullpack (5 Lead)
Key Specifications
Type
MOSFET
VDSS(V)
RDS(ON)
MAX
AC input(V)
Pout(W)
Note 1
100±15%
75
IRIS-G6623
450
1.3Ω
120±15%
100
Note 1: The Pout (W) represents the thermal rating at Quasi-Resonant
Operation, and the peak power output is obtained by approximately 120 to
140% of the above listed. When the output voltage is low and ON-duty is
narrow, the Pout (W) shall become lower than that of above.
IRIS-G6623 is a hybrid IC consists from power MOSFET and a controller IC, designed for Quasi-Resonant
(including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC
realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external
components count and simplifying the circuit designs.
(Note). PRC is abbreviation of Pulse Ratio Control(On-width control with fixed OFF-time).
Typical Connection Diagram
IRIS-G6600
OCP/FB
Vin
GND
S
D
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IRIS-G6623 Даташит, Описание, Даташиты
IRIS-G6623
Absolute Maximum Ratings (Ta=25ºC)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
IDpeak Drain Current
*1
IDMAX Maximum switching current *5
Terminals Max. Ratings Units
1-2 12 A
1-2 12 A
Note
Single Pulse
V2-3=0.78V
Ta=-20~+125
Single Pulse
VDD=99V, L=20mH
EAS Single pulse avalanche energy *2
1-2
157 mJ IL peak=3.5A
Vin Input voltage for control part
4-3 35 V
Vth O.C.P/F.B Pin voltage
5-3 6 V
24 W With infintite heatsink
PD1 Power dissipation for MOSFET *3
1-2
1.5 W Without heatsink
Power dissipation for control part
Specified by
PD2
(Control IC) *4
4-3 0.8 W Vin×Iin
Internal frame temperature
Refer to recommended
TF in operation
- -20 ~ +125 operating temperature
Top Operating ambient temperature
- -20 ~ +125
Tstg Storage temperature
- -40 ~ +125
Tch Channel temperature
- 150
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
Fig.1
V2-3
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and
Pin 3 due to patterning, the maximum switching current decreases as shown by V2-3 in Fig.1
Accordingly please use this device within the decrease value, referring to the derating
curve of the maximum switching current.
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IRIS-G6623 Даташит, Описание, Даташиты
IRIS-G6623
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25, Vin=18V,unless otherwise specified)
Symbol
Defi ni ti on
Vin(ON) Operation start voltage
Vin(OFF) Operation stop voltage
Iin(ON) Circuit current in operation
Iin(OFF) Circuit current in non-operation
TOFF(MAX) Maximum OFF time
Minimum time for input of quasi
Tth(2) resonant signals
*6
TOFF(MIN) Minimum OFF time
*7
Vth(1) O.C.P/F.B Pin threshold voltage 1
Vth(2) O.C.P/F.B Pin threshold voltage 2
IOCP/FB O.C.P/F.B Pin extraction current
Vin(OVP) O.V.P operation voltage
Iin(H)
Latch circuit sustaining current *8
Vin(La.OFF) Latch circuit release voltage *8
Tj(TSD) Thermal shutdown operating temperature
MIN
14.4
9
-
-
45
-
-
0.68
1.3
1.2
20.5
-
6.6
140
Rati ngs
TYP
16
10
-
-
-
-
-
0.73
1.45
1.35
22.5
-
-
-
MAX
17.6
11
30
100
55
1
1.5
0.78
1.6
1.5
24.5
400
8.4
-
Uni ts
V
V
mA
µA
µsec
µsec
µsec
V
V
mA
V
µA
V
Test
Condi ti ons
Vin=017.6V
Vin=17.69V
-
Vin=14V
-
-
-
-
-
Vin=024.5V
Vin=24.58.5V
Vin=24.56.6V
-
*6 Recommended operating conditions
Time for input of quasi resonant signals
Tth(2)1.0μsec
For the quasi resonant signal inputted to OCP/FB Pin
O.C.P/F.B
at the time of quasi resonant operation, the signal shall
Vth(2)
be wider than Tth(2).
0V
*7 The minimum OFF time means TOFF width at the time when the minimum quasi resonant signal is inputted.
*8 The latch circuit means a circuit operated O.V.P and T.S.D.
Electrical Characteristics (for MOSFET)
(Ta=25) unless otherwise specified
Symbol
Defi ni ti on
MIN
Rati ngs
TYP
VDSS Drain-to-Source breakdown voltage
450
-
IDSS Drain leakage current
--
RDS(ON) On-resistance
tf Switching time
--
--
θch-F Thermal resistance
--
MAX
-
300
1.3
250
2.3
Uni ts
V
µA
Ω
nsec
/W
Test Conditions
ID=300µA
V3- 2=0V(short)
VDS =450V
V3-2=0V(s h o rt)
V3-2=10V
ID=1.5A
-
Between channel and
internal frame
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