IRIS-G6353 PDF даташит
Спецификация IRIS-G6353 изготовлена «International Rectifier» и имеет функцию, называемую «Hybrid IC consists». |
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Детали детали
Номер произв | IRIS-G6353 |
Описание | Hybrid IC consists |
Производители | International Rectifier |
логотип |
7 Pages
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Data Sheet No. PD 96946A
IRIS-G6353
Features
• Oscillator is provided on the monolithic control with adopting On-Chip-
Trimming technology.
INTEGRATED SWITCHER
Package Outline
• Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
• Low start-up circuit current (50uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
• Avalanche energy guaranteed MOSFET with high VDSS
• The built-in power MOSFET simplifies the surge absorption circuit
since the MOSFET guarantees the avalanche energy.
• No VDSS de-rating is required.
• Built-in constant voltage drive circuit
•Various kinds of protection functions
• Pulse-by-pulse Overcurrent Protection (OCP)
• Overvoltage Protection with latch mode (OVP)
• Thermal Shutdown with latch mode (TSD)
TO-220 Fullpack (5 Lead)
Key Specifications
Type
MOSFET
VDSS(V)
RDS(ON)
MAX
IRIS-G6353
650
1.90Ω
AC input(V)
230±15%
85 to 264
Pout(W)
Note 1
120
58
Descriptions
Note 1: The Pout (W) represents the thermal rating at PRC Operation,
and the peak power output is obtained by approximately 120 to 140% of
the above listed. When the output voltage is low and ON-duty is narrow,
the Pout (W) shall become lower than that of above.
IRIS-G6353 is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type
SMPS (Switching Mode Power Supply) applications. This IC realizes downsizing and standardizing of a power supply
system reducing external components count and simplifying the circuit designs.
(Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time).
Typical Connection Diagram
IRIS-G6300
OCP/FB
Vin
GND
S
D
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IRIS-G6353
Absolute Maximum Ratings (Ta=25ºC)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
IDpeak Drain Current
*1
IDMAX Maximum switching current *5
Terminals Max. Ratings Units
1-2 10 A
1-2 10 A
Note
Single Pulse
V2-3=0.82V
Ta=-20~+125℃
Single Pulse
VDD=99V, L=20mH
EAS Single pulse avalanche energy *2
1-2
125 mJ IL peak=3.2A
Vin Input voltage for control part
4-3 35 V
Vth O.C.P/F.B Pin voltage
5-3 6 V
26 W With infintite heatsink
PD1 Power dissipation for MOSFET *3
1-2
1.5 W Without heatsink
Power dissipation for control part
Specified by
PD2
(Control IC) *4
4-3 0.14 W Vin×Iin
Internal frame temperature
Refer to recommended
TF in operation
- -20 ~ +125 ℃ operating temperature
Top Operating ambient temperature
- -20 ~ +125 ℃
Tstg Storage temperature
- -40 ~ +125 ℃
Tch Channel temperature
- 150 ℃
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
Fig.1
V2-3
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and
Pin 3 due to patterning, the maximum switching current decreases as shown by V2-3 in Fig.1
Accordingly please use this device within the decrease value, referring to the derating
curve of the maximum switching current.
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IRIS-G6353
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25℃, Vin=20V,unless otherwise specified)
Symbol
Defi ni ti on
Vin(ON) Operation start voltage
Vin(OFF) Operation stop voltage *6
Iin(ON) Circuit current in operation
Iin(OFF) Circuit current in non-operation
TOFF(MAX) Maximum OFF time
Vth O.C.P/F.B Pin threshold voltage
IOCP/FB O.C.P/F.B Pin extraction current
Vin(OVP) O.V.P operation voltage
Iin(H)
Latch circuit sustaining current *7
Vin(La.OFF) Latch circuit release voltage *6,7
Tj(TSD) Thermal shutdown operating temperature
MIN
15.8
9.1
-
-
12
0.7
0.7
23.2
-
7.9
135
Rati ngs
TYP
17.6
10.1
-
-
15
0.76
0.8
25.5
-
-
-
MAX
19.4
11.1
5
50
18
0.82
0.9
27.8
70
10.5
-
Uni ts
V
V
mA
µA
µsec
V
mA
V
µA
V
℃
Test Conditions
Vin=0→19.4V
Vin=19.4→9.1V
-
Vin=15V
-
-
-
Vin=0→27.8V
Vin=27.8→(Vin(OFF)-0.3)V
Vin=27.8→7.9V
-
*6 The relation of VIN(OFF) >VIN(La.OFF) is applied for each product
*7 The latch circuit means a circuit operated O.V.P and T.S.D.
Electrical Characteristics (for MOSFET)
(Ta=25℃) unless otherwise specified
Symbol
Defi ni ti on
MIN
Rati ngs
TYP
VDSS Drain-to-Source breakdown voltage
650
-
IDSS Drain leakage current
--
RDS(ON) On-resistance
tf Switching time
--
--
θch-F Thermal resistance
--
MAX
-
300
1.9
250
2
Uni ts
V
µA
Ω
nsec
℃/W
Test Conditions
ID=300µA
V3- 2=0V(short)
VDS =650V
V3-2=0V(s h o rt)
V3-2=10V
ID=1.2A
-
Between channel and
internal frame
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Номер в каталоге | Описание | Производители |
IRIS-G6351S | INTEGRATED SWITCHER | International Rectifier |
IRIS-G6353 | Hybrid IC consists | International Rectifier |
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