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PDF MRF5S21090HSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF5S21090HSR3 | |
| Descripción | To be Used in class AB for PCN-PCS/cellularradio and WLL applications | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
850 mA, Pout = 19 Watts Avg., Full Frequency Band, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — - 37.5 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 40.5 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S21090H
Rev. 1, 12/2004
MRF5S21090HR3
MRF5S21090HSR3
2170 MHz, 19 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF5S21090HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S21090HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +65
- 0.5, +15
269
1.5
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Tstg
TJ
Symbol
- 65 to +150
200
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 90 W CW
Case Temperature 76°C, 19 W CW
RθJC
0.65
0.69
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2004. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S21090HR3 MRF5S21090HSR3
1
1 page  
TYPICAL CHARACTERISTICS
15
14 Gps
13 ηD
12
11 IRL
10
9
VDD = 28 Vdc, Pout = 19 W (Avg.), IDQ = 850 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
40
35
30
25
20
−20
−25
8
7 IM3
−30
−35
6 −40
ACPR
5
−45
2080 2100 2120 2140 2160 2180 2200
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
−10
−15
−20
−25
−30
−35
17
VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
16 IDQ = 1200 mA
1000 mA
15 850 mA
14 650 mA
13 450 mA
12
1
10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
−20
−25
3rd Order
−30
−35
5th Order
−40
−45
7th Order
−50
−55
−60
0.1
VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 850 mA
Two−Tone Measurements, Center Frequency = 2140 MHz
1
TWO−TONE SPACING (MHz)
10
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
−15
VDD = 28 Vdc
−20 f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
−25
−30
IDQ = 450 mA
−35 1200 mA
−40
−45
−50
1
650 mA
10
1000 mA
850 mA
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. 3rd Order Intermodulation Distortion
versus Output Power
57
55 Ideal
P3dB = 51.17 dBm (130.9 W)
53
51 P1dB = 50.47 dBm (111.4 W)
49
Actual
47
VDD = 28 Vdc, IDQ = 850 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 2140 MHz
45
30 32
34 36
38 40 42
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
RF Device Data
Freescale Semiconductor
MRF5S21090HR3 MRF5S21090HSR3
5
5 Page 
PACKAGE DIMENSIONS
B
B
(FLANGE)
H
E
A
G
1
2
D
bbb M T A M
A
(FLANGE)
2X Q
bbb M T A M
3
K
BM
M (INSULATOR)
bbb M T A M B M
N (LID)
ccc M T A M B M
C
T
SEATING
PLANE
BM
ccc M
aaa M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
R (LID)
T A M BM
S (INSULATOR)
T A M BM
F
INCHES
DIM MIN MAX
A 1.335 1.345
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
G 1.100 BSC
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
Q .118 .138
R 0.365 0.375
S 0.365 0.375
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
33.91 34.16
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
27.94 BSC
1.45 1.70
4.32 5.33
19.66 19.96
19.60 20.00
3.00 3.51
9.27 9.53
9.27 9.52
0.127 REF
0.254 REF
0.381 REF
CASE 465 - 06
ISSUE F
NI - 780
MRF5S21090HR3
4X U
(FLANGE)
B
4X Z
(LID)
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
B
(FLANGE)
2
D
bbb M T A M
2X K
BM
H
E
A
N (LID)
ccc M T A M B M
M (INSULATOR)
bbb M T A M B M
A
(FLANGE)
C
3
T
SEATING
PLANE
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
F
INCHES
DIM MIN MAX
A 0.805 0.815
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
R 0.365 0.375
S 0.365 0.375
U −−− 0.040
Z −−− 0.030
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MILLIMETERS
MIN MAX
20.45 20.70
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
1.45 1.70
4.32 5.33
19.61 20.02
19.61 20.02
9.27 9.53
9.27 9.52
−−− 1.02
−−− 0.76
0.127 REF
0.254 REF
0.381 REF
CASE 465A - 06
ISSUE F
NI - 780S
MRF5S21090HSR3
RF Device Data
Freescale Semiconductor
MRF5S21090HR3 MRF5S21090HSR3
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF5S21090HSR3.PDF ] | |
Hoja de datos destacado
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