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OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
P-TO263-3-2
• 175 °C operating temperature
• dv /dt rated
IPB09N03LA
IPI09N03LA, IPP09N03LA
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
8.9 mΩ
50 A
P-TO262-3-1
P-TO220-3-1
Type
IPB09N03LA
IPI09N03LA
IPP09N03LA
Package
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Ordering Code
Q67042-S4151
Q67042-S4152
Q67042-S4153
Marking
09N03LA
09N03LA
09N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C1)
T C=100 °C
Pulsed drain current
Avalanche energy, single pulse
I D,pulse
E AS
T C=25 °C2)
I D=45 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
50
46
350
75
6
±20
63
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.3
page 1
2003-12-18
www.DataSheet4U.com
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
80
10 V
70
60
50
IPB09N03LA
IPI09N03LA, IPP09N03LA
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
4.5 V
30
3.5 V 3.8 V
3.2 V
4.1 V
25
4.5 V
4.1 V
20
40
30
20
10
0
0
3.8 V
12
V DS [V]
3.5 V
3.2 V
3V
2.8 V
3
15
10
10 V
5
0
0 20 40 60 80 100
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
100
90
80
70
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
70
60
50
60
40
50
40 30
30
20
10
0
0
175 °C
25 °C
1234
V GS [V]
5
20
10
0
0
20 40 60
I D [A]
80
Rev. 1.3
page 5
2003-12-18