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5LP01S PDF даташит

Спецификация 5LP01S изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «Ultrahigh-Speed Switching Applications».

Детали детали

Номер произв 5LP01S
Описание Ultrahigh-Speed Switching Applications
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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5LP01S Даташит, Описание, Даташиты
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Ordering number : ENN6666
5LP01S
P-Channel Silicon MOSFET
5LP01S
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-Speed Switching.
2.5V drive.
Package Dimensions
unit : mm
2124
[5LP01S]
0.75
0.3 0.6
3
0 to 0.1
0.2 1 2
0.5 0.5
1.6
0.1
1 : Gate
2 : Source
3 : Drain
SANYO : SMCP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=--1mA, VGS=0
VDS=--50V, VGS=0
VGS=±8V, VDS=0
VDS=--10V, ID=--100µA
VDS=--10V, ID=--40mA
Ratings
--50
±10
--0.07
--0.28
0.15
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
min
--50
--0.4
70
Ratings
typ
max
Unit
V
10 µA
±10 µA
--1.4 V
100 mS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
DataSheet4 U .com
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2000 TS IM TA-3075 No.6666-1/4









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5LP01S Даташит, Описание, Даташиты
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5LP01S
Continued from preceding page.
Parameter
Symbol
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Marking : XB
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--40mA, VGS=--4V
ID=--20mA, VGS=--2.5V
ID=--5mA, VGS=--1.5V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=--10V, VGS=--10V, ID=--70mA
VDS=--10V, VGS=--10V, ID=--70mA
VDS=--10V, VGS=--10V, ID=--70mA
IS=--70mA, VGS=0
Switching Time Test Circuit
0V VIN
--4V
VIN
PW=10µs
D.C.1%
VDD= --25V
ID= --40mA
RL=625
D VOUT
G
5LP01S
P.G 50S
Ratings
min typ max
Unit
18 23
20 28
30 60
7.4 pF
4.2 pF
1.3 pF
20 ns
35 ns
160 ns
150 ns
1.40 nC
0.16 nC
0.23 nC
--0.85
--1.2 V
--0.07
--0.06
--0.05
ID -- VDS
--2.5V
--2.0V
--0.04
--0.03
--0.02
VGS= --1.5V
--0.01
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Drain-to-Source Voltage, VDS -- V IT00090
RDS(on) -- VGS
40
Ta=25°C
35
30
25
--40mA
20 ID= --20mA
15
10
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Gate-to-Source Voltage, VGS -- V IT00092
DataSheet4 U .com
--0.14
--0.12
ID -- VGS
VDS= --10V
--0.10
--0.08
--0.06
--0.04
--0.02
0
0
100
7
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- ID
IT00091
VGS= --4V
5
3
2
10
--0.01
Ta=75°C
25°C
--25°C
23
5 7 --0.1
Drain Current, ID -- A
23
IT00093
No.6666-2/4









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5LP01S Даташит, Описание, Даташиты
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1000
7
5
3
2
100
7
5
3
2
10
--0.01
40
35
30
25
20
15
RDS(on) -- ID
5LP01S
VGS= --2.5V
100
7
5
Ta=75°C
25°C
--25°C
23
5 7 --0.1
Drain Current, ID -- A
RDS(on) -- Ta
23
IT00094
I
D=
-I-D20=m--A40, mVAG,SV=
--2.5V
GS= --4.0V
3
2
10
--0.001
1.0
7
5
3
2
0.1
7
5
3
2
RDS(on) -- ID
VGS= --1.5V
Ta=75°C
25°C
--25°C
23
5 7 --0.01
Drain Current, ID -- A
yfs-- ID
23
IT00095
VDS= --10V
Ta= --25°C
75°C 25°C
10
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT00096
IF -- VSD
3
VGS=0
2
--0.1
7
5
3
2
--0.01
--0.5
100
7
5
3
2
--0.6
--0.7 --0.8 --0.9 --1.0 --1.1
--1.2
Diode Forward Voltage, VSD -- V
IT00098
Ciss, Coss, Crss -- VDS
f=1MHz
10
7
Ciss
5
Coss
3
2
1.0
7
5
3
2
0.1
0
Crss
--5 --10 --15 --20 --25 --30 --35 --40 --45 --50
Drain-to-Source Voltage, VDS -- V IT00100
0.01
--0.01
1000
7
5
3
2
100
7
5
3
2
23
5 7 --0.1
Drain Current, ID -- A
SW Time -- ID
23
IT00097
VDD= --25V
VGS = --4V
tf
td(off)
tr
td(on)
10
--0.01
--10
VDS= --10V
--9 ID= --70mA
--8
23
5
Drain Current, ID -- A
VGS -- Qg
7 --0.1
IT00099
--7
--6
--5
--4
--3
--2
--1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Total Gate Charge, Qg -- nC
IT00101
No.6666-3/4
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