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PDF MRF6S21060NR1 Data sheet ( Hoja de datos )
| Número de pieza | MRF6S21060NR1 | |
| Descripción | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio, WLL and
TD--SCDMA applications.
• Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 610 mA,
Pout = 14 Watts Avg., f = 2115.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — --40 dBc in 3.84 MHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• 225_C Capable Plastic Package
• N Suffix Indicates Lead--Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S21060N
Rev. 5, 12/2008
MRF6S21060NR1
MRF6S21060NBR1
2110--2170 MHz, 14 W AVG., 28 V
2 x W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF6S21060NR1
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF6S21060NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
--0.5, +68
--0.5, +12
-- 65 to +150
150
225
Characteristic
Symbol
Value (2,3)
Thermal Resistance, Junction to Case
Case Temperature 79°C, 60 W CW
Case Temperature 76°C, 14 W CW
RθJC
0.89
1.04
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
Vdc
Vdc
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2005--2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
1
1 page  
TYPICAL CHARACTERISTICS
16 28
15.8 ηD 27
15.6 VDD = 28 Vdc, Pout = 14 W (Avg.)
15.4 IDQ = 610 mA, 2--Carrier W--CDMA
15.2
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
15 @ 0.01% Probability (CCDF)
26
25
Gps 24
--36
14.8 IM3
--38 --5
14.6 --40 --10
14.4 --42 --15
14.2
IRL
ACPR
--44 --20
14 --46
2060 2080 2100 2120 2140 2160 2180 2200 2220
--25
f, FREQUENCY (MHz)
Figure 3. 2--Carrier W--CDMA Broadband Performance @ Pout = 14 Watts Avg.
15.6
Gps
15.4
39
ηD 38
15.2
15
VDD = 28 Vdc, Pout = 28 W (Avg.)
IDQ = 610 mA, 2--Carrier W--CDMA
10 MHz Carrier Spacing, 3.84 MHz
14.8 Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
14.6
IM3
14.4
IRL
37
36
--26 --6
--28 --9
--12
--30 --15
14.2
ACPR
--32
14 --34
2060 2080 2100 2120 2140 2160 2180 2200 2220
--18
--21
--24
f, FREQUENCY (MHz)
Figure 4. 2--Carrier W--CDMA Broadband Performance @ Pout = 28 Watts Avg.
17
16 763 mA
610 mA
15
458 mA
14
305 mA
13
IDQ = 915 mA
12 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
11
1 10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two--Tone Power Gain versus
Output Power
200
--10
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
--20
--30
915 mA
IDQ = 305 mA
--40
--50
458 mA
763 mA
610 mA
--60
1
10 100 200
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
5
5 Page 
TYPICAL CHARACTERISTICS
0
3--Carrier TD--SCDMA
--10
VDD = 28 V, IDQ = 555 mA
f = 2017.5 MHz
30
25
--20 ηD 20
--30 Adj--U Adj--L 15
--40 10
--50 Alt--L 5
Alt--U
--60 0
0 1 2 3 4 5 6 7 89
Pout, OUTPUT POWER (WATTS) AVG.
Figure 18. 3--Carrier TD--SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
--18 25
6--Carrier TD--SCDMA
--26
VDD = 28 V, IDQ = 560 mA
f = 2017.5 MHz
ηD
20
--34
Adj--L
--42
Adj--U
15
10
Alt--L
--50 5
Alt--U
--58 0
0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5
Pout, OUTPUT POWER (WATTS) AVG.
Figure 19. 6--Carrier TD--SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
TD--SCDMA TEST SIGNAL
--30 1.28 MHz
--30 1.28 MHz
--40
--50
Channel BW
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
--40
--50
Channel BW
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
--60 --60
--70
--ALT2 in
--80 1.28 MHz BW
--3.2 MHz Offset
--90
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
--70
--ALT2 in
--80 1.28 MHz BW
--3.2 MHz Offset
--90
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
--100 --100
--110
--ALT1 in
--120 1.28 MHz BW
--1.6 MHz Offset
--130
Center 2.0175 GHz
1.5 MHz
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
Span 15 MHz
f, FREQUENCY (MHz)
Figure 20. 3--Carrier TD--SCDMA Spectrum
--110
--ALT1 in
--120 1.28 MHz BW
--1.6 MHz Offset
--130
Center 2.0175 GHz
2.5 MHz
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
Span 25 MHz
f, FREQUENCY (MHz)
Figure 21. 6--Carrier TD--SCDMA Spectrum
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
11
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet MRF6S21060NR1.PDF ] | |
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