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Номер произв MRF6S21060NR1
Описание RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Производители Freescale Semiconductor
логотип Freescale Semiconductor логотип 



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MRF6S21060NR1 Даташит, Описание, Даташиты
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio, WLL and
TD--SCDMA applications.
Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 610 mA,
Pout = 14 Watts Avg., f = 2115.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — --40 dBc in 3.84 MHz Bandwidth
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW
Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
225_C Capable Plastic Package
N Suffix Indicates Lead--Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S21060N
Rev. 5, 12/2008
MRF6S21060NR1
MRF6S21060NBR1
2110--2170 MHz, 14 W AVG., 28 V
2 x W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF6S21060NR1
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF6S21060NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
--0.5, +68
--0.5, +12
-- 65 to +150
150
225
Characteristic
Symbol
Value (2,3)
Thermal Resistance, Junction to Case
Case Temperature 79°C, 60 W CW
Case Temperature 76°C, 14 W CW
RθJC
0.89
1.04
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
Vdc
Vdc
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2005--2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
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MRF6S21060NR1 Даташит, Описание, Даташиты
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3 260 °C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1 μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics (DC)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
IGSS
1 μAdc
VGS(th)
1.5
2.2
2.5 Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 610 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4 Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VDS(on)
0.3
— Vdc
Crss — 1.5 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 610 mA, Pout = 14 W Avg., f1 = 2115.5 MHz, f2 =
2122.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps 13.5 15.5 16.5 dB
Drain Efficiency
ηD 24.5 26 — %
Intermodulation Distortion
IM3 — --37 --35 dBc
Adjacent Channel Power Ratio
ACPR
--40 --38 dBc
Input Return Loss
IRL
--14 --10
dB
1. Part is internally matched both on input and output.
MRF6S21060NR1 MRF6S21060NBR1
2
RF Device Data
Freescale Semiconductor









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MRF6S21060NR1 Даташит, Описание, Даташиты
VBIAS
R1
R2 C6 C1 C2
RF
INPUT Z1
Z2 Z3 Z4 Z5
C7
Z6
R3 Z8
Z7
DUT
C3 C4
C5
VSUPPLY
Z15
Z9
Z10 Z11 Z12 Z13
RF
Z14 OUTPUT
C8
Z16
VSUPPLY
C9 C10 C11
Z1 0.250x 0.080Microstrip
Z2 0.860x 0.080Microstrip
Z3 0.300x 0.405Microstrip
Z4 0.350x 0.080Microstrip
Z5 0.350x 0.755Microstrip
Z6 0.680x 0.080Microstrip
Z7 0.115x 0.755Microstrip
Z8 0.115x 1.000Microstrip
Z9 0.240x 1.000Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.270x 0.300Microstrip
0.230x 0.080Microstrip
0.310x 0.300Microstrip
0.830x 0.080Microstrip
0.200x 0.080Microstrip
1.000x 0.080Microstrip
1.100x 0.070Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030, εr = 2.55
Figure 1. MRF6S21060NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S21060NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
C1
100 nF Chip Capacitor
CDR33BX104AKYS
C2, C7
4.7 pF Chip Capacitors
ATC100B4R7BT500XT
C3, C8, C9
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
C4, C5, C6, C10, C11
10 μF, 35 V Chip Capacitors
GRM55DR61H106KA88L
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
R2
10 kΩ, 1/4 W Chip Resistor
CRCW12061002FKEA
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Manufacturer
Kemet
ATC
ATC
Murata
Vishay
Vishay
Vishay
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
3










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