STW29NK50ZD PDF даташит
Спецификация STW29NK50ZD изготовлена «ST Microelectronics» и имеет функцию, называемую «N-CHANNEL SuperMESH MOSFET». |
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Детали детали
Номер произв | STW29NK50ZD |
Описание | N-CHANNEL SuperMESH MOSFET |
Производители | ST Microelectronics |
логотип |
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STW29NK50ZD
N-CHANNEL 500 V - 0.11Ω - 29A TO-247
Fast Diode SuperMESH™ MOSFET
PRODUCT PREVIEW
Table 1: General Features
Figure 1: Package
TYPE
VDSS RDS(on)
ID
PW
STW29NK50ZD 500 V < 0.15 Ω 29 A
s TYPICAL RDS(on) = 0.11 Ω
s HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
s FAST INTERNAL RECOVERY TIME
350 W
3
2
1
TO-247
DESCRIPTION
The Fast SuperMesh™ series associates all ad-
vantages of reduced on-resistance, zener gate
Figure 2: Internal Schematic Diagram
protection and very goog dv/dt capability with a
Fast body-drain recovery diode. Such serieDsactaoSmh-eet4U.com
plements the “FDmesh™” Advanced Technology.
APPLICATIONS
s HID BALLAST
s ZVS PHASE-SHIFT FULL BRIDGE
DataShee
Table 2: Order Codes
PART NUMBER
STW29NK50ZD
MARKING
W29NK50ZD
PACKAGE
TO-247
PACKAGING
TUBE
DataSheet4U.com
December 2004
Rev. 2
1/7
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STW29NK50ZD
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 KΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(*) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Operating Junction Temperature
(*) Pulse width limited by safe operating area
(1) ISD≤ 29 A, di/dt≤ 200 A/µs, VDD≤ V(BR)DSS, TJ≤ TJMAX
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
Value
500
500
± 30
29
18.27
116
350
2.77
6000
4.5
-55 to 150
0.36
50
300
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
°C/W
°C/W
°C
Table 5: Avalanche Characteristics
et4U.com Symbol
ParameterDataSheet4U.com
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
29
500
UnitDataShee
A
mJ
Table 6: Gate-Source Zener Diode
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Condition
Igs= ± 1mA (Open Drain)
Min.
30
Typ.
Max
Unit
A
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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STW29NK50ZD
TABLE 7: ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
On /Off
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Unit
V(BR)DSS Drain-source Breakdown
Voltage
ID = 1 mA, VGS = 0
500
S
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125°C
1 µA
50 µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 10 µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 150 µA
3
3.75 4.5
V
RDS(on
Static Drain-source On
Resistance
VGS = 10 V, ID = 14.5 A
0.11 0.15
Ω
Table 8: Dynamic
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
et4U.com
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDS = 15 V, ID = 14.5 A
VDS = 25 V, f = 1 MHz, VGS = 0
VDD = 400 V, ID = 14.5 A,
RG = 4.7 Ω, VGS = 10 V
(Resistive Load see Figure 4))
DataSheet4U.com
VDD = 480 V, ID = 14.5 A,
VGS = 10 V
Min.
Typ.
28
6000
570
155
Max.
Unit
S
pF
pF
pF
TBD
ns
TBD
TBD
ns
ns
TBD
ns
180 200 nCDataShee
TBD
nC
TBD
nC
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 29 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 29 A, di/dt = 100 A/µs
VDD = 30V, Tj = 25°C
(see test circuit Figure 5)
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 29 A, di/dt = 100 A/µs
VDD = 30V, Tj = 150°C
(see test circuit Figure 5)
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Min.
Typ.
TBD
TBD
TBD
TBD
TBD
TBD
Max.
29
116
1.6
Unit
A
A
V
ns
µC
A
ns
µC
A
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Номер в каталоге | Описание | Производители |
STW29NK50Z | N-CHANNEL SuperMESH MOSFET | ST Microelectronics |
STW29NK50ZD | N-CHANNEL SuperMESH MOSFET | ST Microelectronics |
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