DataSheet26.com

AF8510C PDF даташит

Спецификация AF8510C изготовлена ​​​​«Anachip» и имеет функцию, называемую «N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AF8510C
Описание N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Anachip
логотип Anachip логотип 

8 Pages
scroll

No Preview Available !

AF8510C Даташит, Описание, Даташиты
www.DataSheet4U.com
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
„ Features
- Lower On-Resistance
- Simple Drive Requirement
- Fast Switching Performance
- Pb Free Plating Product
„ Product Summary
CH BVDSS (V) RDS(ON) (m)
N 30
28
P -30
55
ID (A)
6.9
-5.3
„ General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
costeffectiveness.
The SO-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applicat ions such as DC/DC
converters.
„ Pin Assignments
„ Pin Descriptions
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
Pin Name
S1
7 D1 DataSheet4U.com G1
D1
6 D2
S2
5 D2
G2
D2
Description
Source (NMOS)
Gate (NMOS)
Drain (NMOS)
Source (PMOS)
Gate (PMOS)
Drain (PMOS)
DataShee
„ Ordering information
A X 8510C X X
Feature
F :MOSFET
PN
Package
S: SOP-8
Packing
Blank : Tube or Bulk
A : Tape & Reel
DataSheet4U.comThis datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Nov 14, 2005
1/8
DataSheet4 U .com









No Preview Available !

AF8510C Даташит, Описание, Даташиты
www.DataSheet4U.com
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
et4U.com
„ Absolute Maximum Ratings
Symbol
VDS
VGS
ID
IDM
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
TA=25ºC
TA=70ºC
Pulsed Drain Current (Note 2)
Total Power Dissipation
Linear Deratomg Factor
TA=25ºC
Operating Junction and Storage Temperature Range
N-Channel P-Channel
30 -30
±20 ±20
6.9 -5.3
5.5 -4.2
30 -30
2.0
0.016
-55 to 150
Units
V
V
A
W
W/ ºC
ºC
„ Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient (Note 1)
Max.
Maximum
62.5
Units
ºC/W
„ N-CH Electrical Characteristics at TJ=25ºC unless otherwise specified
Symbol
BVDSS
 BVDSS / TJ
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Reference to 25oC,
Coefficient
DataSIhD=e1emt4AU.com
Static Drain-Source
On-Resistance (Note 3)
VGS=10V, ID=5A
VGS=4.5V, ID=3A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current
(TJ=25oC)
VDS=10V, ID=5A
VDS=30V, VGS=0V
Drain-Source Leakage Current
(TJ=70oC)
VDS=24V, VGS=0V
Gate-Source Leakage
VGS=±20V
Total Gate Charge (Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
ID=6.9A,
VDS=24V,
VGS=4.5V
Turn-On Delay Time (Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
VDS=15V,
ID=1A,
RG=3.3, VGS=10V
RD=15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V,
VDS=25V,
f=1.0MHz
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.02
-
-
-
4.6
-
-
-
10
2
6
8
7
20
6
540
160
120
Max.
-
-
28
40
3
-
1
25
±100
16
-
-
-
-
-
-
870
-
-
Units
V
V/oC
m
V
S
uA
nA
nC
ns
pF
„ Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage (Note 3)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
IS=6.9A, VGS=0V
dl/dt=100A/µs
Min.
-
-
-
Typ.
-
20
11
Max.
1.2
-
-
Unit
V
ns
nC
DataSheet4U.comAnachip Corp.
www.anachip.com.tw
Rev. 1.0 Nov 14, 2005
2/8
DataSheet4 U .com
DataShee









No Preview Available !

AF8510C Даташит, Описание, Даташиты
www.DataSheet4U.com
et4U.com
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
„ P-CH Electrical Characteristics at TJ=25ºC unless otherwise specified
Symbol
Parameter
Test Conditions
Min. Typ. Max.
BVDSS
 BVDSS /
 TJ
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Reference to 25oC,
Coefficient
ID=1mA
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-3A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
VDS=-10V, ID=-5A
Drain-Source Leakage Current
(TJ=25oC)
VDS=-30V, VGS=0V
Drain-Source Leakage Current
(TJ=70oC)
VDS=-24V, VGS=0V
Gate-Source Leakage
VGS=±20V
Total Gate Charge (Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
ID=-5.3A,
VDS=-24V,
VGS=-4.5V
Turn-On Delay Time (Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
VDS=-15V,
ID=1A,
RG=3.3, VGS=-10V
RD=15
Input Capacitance
VGS=0V,
ROeuvtpeurst eCTapraancsitfaenrcCeapacitancDeataSVfh=De1Se.=0t2M45UHV.z,com
-30 -
- -0.023
--
--
1-
- 4.9
--
-
-
55
90
-3
-
-1
- - -25
- - ±100
- 9 15
-2-
-6-
- 10 -
-8-
- 25 -
- 13 -
- 580 930
- 180 -
- 120 -
Units
V
V/oC
m
V
S
uA
nA
nC
ns
pF
„ Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ.
VSD Forward On Voltage (Note 3)
IS=1.7A, VGS=0V
-
trr Reverse Recovery Time)
IS=-5.3A, VGS=0V,
-
Qrr Reverse Recovery Charge
dl/dt=100A/µs
-
Note 1: Surface mounted on 1 in2 copper pad of FR4 board; 135oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
-
21
17
Note 3: Pulse width 300us, duty cycle 2%.
Max.
-1.2
-
-
Unit
V
ns
nC
DataShee
DataSheet4U.comAnachip Corp.
www.anachip.com.tw
DataSheet4 U .com
Rev. 1.0 Nov 14, 2005
3/8










Скачать PDF:

[ AF8510C.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
AF8510CN AND P-CHANNEL ENHANCEMENT MODE POWER MOSFETAnachip
Anachip

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск