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PDF MRF20060 Data sheet ( Hoja de datos )
| Número de pieza | MRF20060 | |
| Descripción | RF POWER BROADBAND NPN BIPOLAR | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron Bipolar Line
RF Power Bipolar Transistors
The MRF20060 and MRF20060S are designed for broadband commercial
and industrial applications at frequencies from 1800 to 2000 MHz. The high
gain, excellent linearity and broadband performance of these devices make
them ideal for large–signal, common emitter class A and class AB amplifier
applications. These devices are suitable for frequency modulated, amplitude
modulated and multi–carrier base station RF power amplifiers.
• Guaranteed Two–tone Performance at 2000 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 9 dB
Efficiency — 33%
Intermodulation Distortion — –30 dBc
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP)
Output Power
• Designed for FM, TDMA, CDMA and Multi–Carrier Applications
DataSheet4U.com
Order this document
by MRF20060/D
MRF20060
MRF20060S
60 W, 2000 MHz
RF POWER
BROADBAND
NPN BIPOLAR
CASE 451–04, STYLE 1
(MRF20060)
DataShee
CASE 451A–01, STYLE 1
(MRF20060S)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage (IB = 0 mA)
Collector–Emitter Voltage
Collector–Base Voltage
Collector–Emitter Voltage (RBE = 100 Ohm)
Base–Emitter Voltage
Collector Current – Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case
DataSheet4U.com
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
DataSheet4 U .com
Symbol
VCEO
VCES
VCBO
VCER
VEB
IC
PD
Tstg
TJ
Symbol
RθJC
Value
25
60
60
30
–3
8
250
1.43
– 65 to +150
200
Max
0.7
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
MRF20060 MRF20060S
1
1 page  
www.DataSheet4U.com
TYPICAL CHARACTERISTICS
70
60
Pout
50
40
Gpe
30
20
VCC = 26 Vdc
10 ICQ = 200 mA
f = 2000 MHz Single Tone
0
02468
Pin, INPUT POWER (WATTS)
Figure 3. Output Power & Power Gain
versus Input Power
11.5
11
10.5
10
9.5
9
8.5
8
10
70
Pin = 7 W
60
5W
50
40
3W
30
20
10
0
1800
VCC = 26 Vdc
ICQ = 200 mA
1850 1900 1950
f, FREQUENCY (MHz)
2000
Figure 4. Output Power versus Frequency
et4U.com
– 20 10.5 –10
3rd Order
– 30
5th Order
– 40
10
Gpe
9.5
–15
–20
7th Order
– 50
VCC = 26 Vdc
– 60 ICQ = 200 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
– 70
0 10 20 30 40 50 60
Pout, OUTPUT POWER (WATTS) PEP
9
8.5
DataSheet4U.com
8
70 80
7.5
18
Pout = 60 W (PEP)
ICQ = 200 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
IMD
20 22 24 26
VCC, COLLECTOR SUPPLY VOLTAGE (Vdc)
–25
–30
–35
–40
28
Figure 5. Intermodulation Distortion
versus Output Power
Figure 6. Power Gain and Intermodulation
Distortion versus Supply Voltage
DataShee
– 20
ICQ = 100 mA
– 25
– 30
200 mA
– 35
– 40
400 mA
– 45
600 mA
– 50
0.1
1.0
VCC = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion
versus Output Power
DataSheet4U.com
MOTOROLA RF DEVICE DATA
DataSheet4 U .com
100
11
ICQ = 600 mA
10
400 mA
9
200 mA
8
7
100 mA
6
0.1 1.0
VCC = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain versus Output Power
MRF20060 MRF20060S
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MRF20060.PDF ] | |
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