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PDF MRF20030 Data sheet ( Hoja de datos )
| Número de pieza | MRF20030 | |
| Descripción | RF POWER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF20030/D
The RF Sub–Micron Bipolar Line
RF Power Bipolar Transistor
Designed for broadband commercial and industrial applications at frequen-
cies from 1800 to 2000 MHz. The high gain and broadband performance of this
device makes it ideal for large–signal, common–emitter class A and class AB
amplifier applications. Suitable for frequency modulated, amplitude modulated
and multi–carrier base station RF power amplifiers.
• Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics
Output Power — 30 Watts (PEP)
Power Gain — 9.8 dB
Efficiency — 34%
Intermodulation Distortion — –28 dBc
• Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics
Output Power — 30 Watts
Power Gain — 10.5 dB
Efficiency — 40%
• Excellent Thermal Stability
• Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP)
Output Power
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Designed for FM, TDMA, CDMA, and Multi–Carrier Applications
MAXIMUM RATINGS
Collector–Emitter Voltage
Rating
DataSheet4U.com
Collector–Emitter Voltage
Collector–Base Voltage
Collector–Emitter Voltage (RBE = 100 Ω)
Emitter–Base Voltage
Collector Current – Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case (1)
(1) Thermal resistance is determined under specified RF operating condition.
Symbol
VCEO
VCES
VCBO
VCER
VEB
IC
PD
Tstg
TJ
Symbol
RθJC
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
V(BR)CEO
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
V(BR)CES
Collector–Base Breakdown Voltage
(IC = 25 mAdc, IE = 0)
V(BR)CBO
DataSheet4U.com
REV 1
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
Min
25
60
60
DataSheet4 U .com
MRF20030
30 W, 2.0 GHz
NPN SILICON
BROADBAND
RF POWER TRANSISTOR
CASE 395D–03, STYLE 1
Value
25
60
60
30
–3
4
125
0.71
– 65 to +150
200
Max
1.4
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
DataShee
Typ Max Unit
26 — Vdc
70 — Vdc
70 — Vdc
MRF20030
1
1 page  
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TYPICAL CHARACTERISTICS
35
30
Pout
25
20
Gpe
15
10
VCC = 26 Vdc
5 ICQ = 125 mA
f = 2000 MHz Single Tone
0
01234
Pin, INPUT POWER (WATTS)
11.5 40
11 35 Pin = 3.5 W
10.5 30
25
10
20
9.5
15
9
10
8.5 5
2.5 W
1.5 W
VCC = 26 Vdc
ICQ = 125 mA
80
5 1800 1850 1900 1950 2000
f, FREQUENCY (MHz)
Figure 3. Output Power & Power Gain
versus Input Power
Figure 4. Output Power versus Frequency
et4U.com
– 20
– 30
– 40
– 50
– 60
– 70
0
11.5
3rd Order
5th Order
7th Order
VCC = 26 Vdc
ICQ = 125 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
5 10 15 20 25 30
Pout, OUTPUT POWER (WATTS) PEP
11
10.5
10
9.5
9
DataSheet4U8..5com
8
35 40
7.5
18
Gpe
Pout = 30 W (PEP)
ICQ = 125 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
IMD
20 22 24 26
VCC, COLLECTOR SUPPLY VOLTAGE (Vdc)
Figure 5. Intermodulation Distortion
versus Output Power
Figure 6. Power Gain and Intermodulation
Distortion versus Supply Voltage
–5
–10
–15
–20
–25
–30
–35
–40
–45
28
DataShee
– 25
– 30
– 35 ICQ = 75 mA
– 40
– 45 125 mA
– 50
– 55
– 60
0.01
250 mA
400 mA
0.1
VCC = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
1.0 10
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion
versus Output Power
DataSheet4U.com
MOTOROLA RF DEVICE DATA
DataSheet4 U .com
100
12
ICQ = 400 mA
11
250 mA
10
9
125 mA
8
7
6
5 75 mA
0.01
0.1
VCC = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
1.0 10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain versus Output Power
MRF20030
5
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| PDF Descargar | [ Datasheet MRF20030.PDF ] | |
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