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PDF MRF1150MA Data sheet ( Hoja de datos )

Número de pieza MRF1150MA
Descripción MICROWAVE POWER TRANSISTOR NPN SILICON
Fabricantes Tyco Electronics 
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No Preview Available ! MRF1150MA Hoja de datos, Descripción, Manual

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SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Pulse
Power Transistor
Designed for Class B and C common base amplifier applications in short
pulse TACAN, IFF, and DME transmitters.
Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 150 Watts Peak
Minimum Gain = 7.8 dB
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
Order this document
by MRF1150MA/D
MRF1150MA
150 W PEAK, 960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak (1)
Total Device Dissipation @ TC = 25°C (1) (2)
Derate above 25°C
VCBO
70 Vdc
VEBO
4.0 Vdc
IC 12 Adc
PD DataShe58e3t4U.comWatts
3.33 W/°C
Storage Temperature Range
Tstg –65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
Symbol
RθJC
CASE 332–04, STYLE 1
DataShee
Max Unit
0.3 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
70
— Vdc
Collector–Base Breakdown Voltage
(IC = 50 mAdc, IE = 0)
V(BR)CBO
70
— Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
— Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
ICBO — — 10 mAdc
ON CHARACTERISTICS
DC Current Gain (4)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE 10 30 — —
NOTES:
(continued)
1. Pulse Width = 10 µs, Duty Cycle = 1%.
2. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
4. 80 µs Pulse on Tektronix 576 or equivalent.
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