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NST3904DXV6T5 PDF даташит

Спецификация NST3904DXV6T5 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «(NST3904DXV6T1 / NST3904DXV6T5) Dual General Purpose Transistor».

Детали детали

Номер произв NST3904DXV6T5
Описание (NST3904DXV6T1 / NST3904DXV6T5) Dual General Purpose Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NST3904DXV6T5 Даташит, Описание, Даташиты
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NST3904DXV6T1,
NST3904DXV6T5
Dual General Purpose
Transistor
The NST3904DXV6T1 device is a spin- off of our popular
SOT-23/SOT-323 three-leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT- 563
six-leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low-power surface mount
applications where board space is at a premium.
hFE, 100-300
Low VCE(sat), 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Lead-Free Solder Plating
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Electrostatic Discharge
Symbol
VCEO
VCBO
VEBO
IC
ESD
Value
Unit
40 Vdc
60 Vdc
6.0 Vdc
D2a00taSheet4mUA.dccom
HBM>16000,
MM>2000
V
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
Derate above 25°C
TA = 25°C
PD
357
(Note 1)
2.9
(Note 1)
mW
mW/°C
Thermal Resistance
Junction-to-Ambient
RqJA
350
(Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
Derate above 25°C
TA = 25°C
PD
500
(Note 1)
4.0
(Note 1)
mW
mW/°C
Thermal Resistance
Junction-to-Ambient
RqJA
250
(Note 1)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg - 55 to +150
°C
1. FR-4 @ Minimum Pad
http://onsemi.com
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
NST3946DXV6T1
654
12 3
SOT-563
CASE 463A
PLASTIC
MARKING DIAGRAM
MA D
MA = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
NST3904DXV6T1
Package
Shipping
SOT-563
4 mm pitch
4000/Tape & Reel
NST3904DXV6T5 SOT-563
2 mm pitch
8000/Tape & Reel
DataShee
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© Semiconductor Components Industries, LLC, 2003
March, 2003 - Rev. 0
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1 Publication Order Number:
NST3904DXV6T1/D
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NST3904DXV6T5 Даташит, Описание, Даташиты
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NST3904DXV6T1, NST3904DXV6T5
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
Collector - Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter - Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector - Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base - Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL- SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
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Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width 300 µs; Duty Cycle 2.0%.
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
40
60
6.0
-
-
Vdc
-
Vdc
-
Vdc
-
nAdc
50
nAdc
50
hFE
VCE(sat)
VBE(sat)
40
70
100
60
30
-
-
0.65
-
-
-
300
-
-
0.2
0.3
0.85
0.95
-
Vdc
Vdc
fT MHz
300 -
Cobo
pF
- 4.0
Cibo
pF
- 8.0
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NST3904DXV6T5 Даташит, Описание, Даташиты
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NST3904DXV6T1, NST3904DXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Symbol
hie
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hre
Small - Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hfe
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hoe
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k , f = 1.0 kHz)
NF
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = - 0.5 Vdc)
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
Fall Time
(IB1 = IB2 = 1.0 mAdc)
td
tr
ts
tf
Min
1.0
2.0
0.5
0.1
100
100
1.0
3.0
-
-
-
-
-
-
Max
10
12
8.0
10
400
400
40
60
5.0
4.0
Unit
k
X 10- 4
-
mmhos
dB
35
ns
35
200
ns
50
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DUTY CYCLE = 2%
300 ns
−0.5 V
+10.9 V
10 k
< 1 ns
+3 V
10 < t1 < 500 ms
275DataSDUhTeYeCtY4CULE.c=o2m%
t1
Cs < 4 pF*
0
−9.1 V
+10.9 V
10 k
< 1 ns
1N916
+3 V
275
Cs < 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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