1C5819B PDF даташит
Спецификация 1C5819B изготовлена «Sensitron» и имеет функцию, называемую «(1C5819A - 1C5819C) Silicon Schottky Rectifier DIE». |
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Детали детали
Номер произв | 1C5819B |
Описание | (1C5819A - 1C5819C) Silicon Schottky Rectifier DIE |
Производители | Sensitron |
логотип |
3 Pages
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SENSITRON
SEMICONDUCTOR
1C5819A/B/C
TECHNICAL DATA
DATA SHEET 676, REV. -
SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
• Soft Reverse Recovery at Low and High Temperature
• Very Low Forward Voltage Drop
• Low Power Loss, High Efficiency
• High Surge Capacity
• Guard Ring for Enhanced Durability and Long Term Reliability
• Guaranteed Reverse Avalanche Characteristics
• Electrically / Mechanically Stable during and after Packaging
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche Current
Max. Junction Temperature
Max. Storage Temperature
Electrical Characteristics:
Symbol
VRWM
IF(AV)
IFSM
EAS
IAR
TJ
Tstg
Condition
-
50% duty cycle, rectangular
wave form
8.3 ms, Sine pulse (1)
TJ = 25 °C, IAS = 0.18 A,
L = 160 mH
IAS decay linearly to 0 in 1 µs
ƒ limited by TJ max VA=1.5VR
-
-
Max.
45
1
25
2.6
0.18
-55 to +125
-55 to +150
Units
V
A
A
mJ
A
°C
°C
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Max. Junction Capacitance
(1) in SHD package
Symbol
VF1
VF2
IR1
IR2
CT
Condition
@ 1A, Pulse, TJ = 25 °C
@ 1A, Pulse, TJ = 100 °C
@VR = 45V, Pulse,
TJ = 25 °C
@VR = 45V, Pulse,
TJ = 100 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
Max.
0.49
0.45
50
5.0
70
Units
V
V
µA
mA
pF
• 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 •
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TECHNICAL DATA
DATA SHEET 676, REV. -
Mechanical Dimensions: In Inches / mm
1C5819A/B/C
0.034 ± 0.003 0.040 ± 0.003
(0.86 ± 0.077) (1.02 ± 0.077)
H
Bottom side metalization Ag - 30 kÅ minimum.
Top side metalization Al - 25 kÅ minimum
or Ag - 30 kÅ minimum.
Bottom side is cathode, top side is anode.
Dimension H = 0.0105 ± 0.001 (0.27 ± 0.026) for Al top;
Dimension H = 0.0155 ± 0.001 (0.39 ± 0.026) for Ag top.
Typical Forward Characteristics
100
125 °C
10-1
10-2
100 °C
25 °C
10-3
0.0
0.1 0.2 0.3 0.4 0.5
Forward Voltage Drop - V F (V)
0.6
Typical Reverse Characteristics
10 2
150 °C
10 1
125 °C
10 0 100 °C
75 °C
10-1
50 °C
10-2
25 °C
10-3
0
50
10 20 30 40 50
Reverse Voltage - VR (V)
Typical Junction Capacitance
60
40
30
20
10
0
10 20 30 40 50
Reverse Voltage - VR (V)
60
• 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 •
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
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Номер в каталоге | Описание | Производители |
1C5819 | Silicon Rectifier DICE | Freescale Semiconductor |
1C5819A | (1C5819A - 1C5819C) Silicon Schottky Rectifier DIE | Sensitron |
1C5819B | (1C5819A - 1C5819C) Silicon Schottky Rectifier DIE | Sensitron |
1C5819C | (1C5819A - 1C5819C) Silicon Schottky Rectifier DIE | Sensitron |
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